RS1A TAYCHIPST | Alldatasheet
Document overview
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Technical content
Features
/c183 Glass Passivated Die Construction /c183 Fast Recovery Time For High Efficiency /c183 Low Forward Voltage Drop and High Current Capability /c183 Surge Overload Rating to 30A Peak /c183 Ideally Suited for Automated Assembly /c183 Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data /c183 Case: Molded Plastic /c183 Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 /c183 Polarity: Cathode Band or Cathode Notch /c183 SMA Weight: 0.064 grams (approx.) /c183 SMB Weight: 0.093 grams (approx.) /c183 Mounting Position: Any /c183 Marking: Type Number Absolute Maximum Ratings* T A = 25°C unless otherwise noted These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T A = 25°C unless otherwise noted Symbol Parameter Value Units I O Average Rectified Current @ T A = 100°C 1.0 A i f(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 A P D Total Device Dissipation Derate above 25°C 1.19 9.5 W mW/ °C R θJA Thermal Resistance, Junction to Ambient 105 °C/W R θJC Thermal Resistance, Junction to Case 32 °C/W T stg Storage Temperature Range -55 to +150 °C T J Operating Junction Temperature -55 to +150 °C Parameter Device Units 1A 1B 1D 1G 1J 1K 1M Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated V R ) 50 100 200 400 600 800 1000 V Maximum Reverse Current @ rated V R T A = 25°C T A = 125°C 5.0 µA µA Maximum Forward Voltage @ 1.0 A 1.3 V Maximum Reverse Recovery Time I F = 0.5 A, I R = 1.0 A, I rr = 0.25 A 150 250 500 nS Typical Junction Capacitance V R = 4.0 V, f = 1.0 MHz 10 pF
SURFACE MOUNT FAST RECOVERY RECTIFIERS E-mail: sales@taychipst.com Web Site: www.taychipst.com 50V-1000V 1.0A RS1A THRU RS1M 0.4 25 50 75 100 125 150 175 I , AVERAGE RECTIFIED CURRENT (A) O T , TERMINAL TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve T 0.2 0.6 0.8 1.0 0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I INST ANTANEOUS FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25°C j I Pulse Width: 300 s F µ 1 10 100 I , PEAK FORWARD SURGE CURRENT FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) T = 150°C j 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.4 T ypical Reverse Characteristics T = 125 C j T = 25°C j 50V DC Approx
50 NI (Non-inductive)Ω 10 NIΩ
1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est t rr Set time base for 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recovery Time Characteristic and T est Circuit (+) (+) (-) (-) 2 of 2