RR264M-400W KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Diodes Rectifier Diodes ■ Features

  • Small power mold type（PMDU）
  • High Reliability RR264M-400W Unit: mmSOD-323 1.7+0.1 -0.1 2.6+0.1 -0.1 1.3+0.1 -0.1 0.1+0.05 -0.02 0.475 0.375 0.3+0.05 -0.05 0.85+0.05 -0.05 1.0max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse voltage VRM 400 V Forward current IF 1 Peak forward surge current (60Hz1cyc) IFM 25 Average rectified forward current *1 Io 0.7 Junction Temperature TJ 150 Storage temperature range Tstg -55 to 150 *1 Mounting on epoxy board. 180°Half sine wave A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 400 Forward voltage VF1 IF= 0.7A 1.1 Reverse voltage leakage current IR1 VR= 400 V 10 uA V ■ Marking NO. RR264M-400W Marking 24 PIN 1. CATHODE 2. ANODE

www.kexin.com.cn2 Dio des Rectifier Diodes RR264M-400W ■ Typical Characterisitics 100 150 AVE:44.0A 8 3 Ifsm 1cyc 100 001011 920 930 940 950 960 970 100 110 120 130 140 150 AVE:99.5pF Ta=25 f=1MHz VR=0V n=10pcs 100 150 200 250 300 350 400 450 500 AVE:4.860us Ta=25 C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 0.1 100 1000 10000 100000 0 100 200 300 400 Ta=125 Ta=75 Ta=25 Ta=-25 Ta=150 100 0 5 10 15 20 25 300.001 0.01 0.1 0 200 400 600 800 1000 1200 Ta=-25 Ta=150 Ta=75 Ta=25 Ta=125 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT : IF(A) REVERSE CURRENT : IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME : trr(us) 8.3ms Ifsm 1cyc f=1MHz Ta=25 VR=400V n=30pcs AVE:34.13nA AVE:940.7mV Ta=25 IF=1A n=30pcs 8.3ms Ifsm 1cyc 8.3ms ℃ ℃ ℃ ℃

www.kexin.com.cn 3 Diod es Rectifier Diodes RR264M-400W ■ Typical Characterisitics 0.5 1.5 0 0.5 1 1.5 Sin( = 180) D=1/2 DC 100 001011 8.3ms 1cyc 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=0.35A 300us time Mounted on epoxy board PEAK SURGE FORWARD CURRENT : IFSM(A) TIME : t(ms) IFSM-t CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) FORWARD POWER DISSIPATION : Pf(W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS θ 0.5 1.5 0 25 50 75 100 125 150 T Tj=150 D=t/T t VR Io VR=200V Sin( =180) D=1/2 DC 0.5 1.5 0 25 50 75 100 125 150 Io0 T Tj=150 D=t/Tt VR Io VR=200V Sin( =180) D=1/2 DC 0.002 0.004 0.006 0.008 0.01 0 100 200 300 400 Sin( =180) D=1/2 DC REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta)" AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE : Tc(℃) Derating Curve"(Io-Tc)" C=200pF R=0 C=100pF R=1.5k AVE:6.90kV AVE:28.4kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP θ ℃ ℃ θ θ Ω Ω