RP1HZ DSK | Alldatasheet
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Case: JEDEC DO-15, molded p lastic MIL-STD-202, Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 10ms single half -sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.1A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJL Operating junction temperature range T J Storage temperature range T STG 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 1400 DO - 15 Terminals: Axial lead s,solderable per RP1H 2000 RP1H(Z) - 55 ----- + 150 NOTE: 1.Measured with I F =0.5A, I R =1A, I rr =0.25A. 3.Thermal resistance junction to ambient . Easily cleaned with freon, alcohol, lsopropand Polarity: Color band deno tes cathode Weight: 0.014 oun ces, 0.39 grams I R - 55 ----- + 150 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 2000 V CURRENT: 0.1 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Low forward voltage d rop High crrent capability I F(AV) I FSM UNITS 2000 7.0 A 0.1 5.0 A V 20.0 200.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
AMBIENT TEMPERATURE, AVERAGE FORWARD RECTIFIED CURRENT INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- PEAK FORWARD SURGE CURRENT FIG.5--TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE,pF REVERSE VOLTAGE,VOLTS RP1H(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SE T TIM E BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns M AX.SOURCE IM PEDANCE=50 N NONIN- DUCTIVE N (+) 25VDC (approx) (-) D.U.T. PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) t rr -1.0A -0.25A +0.5A 1cm T J =25 Pulse Width=300 µ S 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1 5 10 50 3.0 4.0 5.0 1.0 2.0 8.3ms Single Half Sine-Wave .02 0.06 0 50 75 .04 0.08 0.1 125100 150 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.1 T J =25 0.2 0.4 1 2 1004 10 4020 200 100 Diode Semiconductor Korea www.diode.kr