RMWP23001 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- 4mil substrate
- Small-signal gain 22.5dB (typ.)
- 1dB compressed Pout 23.5dBm (typ.)
- Chip size 2.6mm x 1.2mm Absolute Ratings Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg Negative DC Voltage -2 V Vdg Simultaneous (Vd–Vg) 8 V I D Positive DC Current 607 mA P IN RF Input Power (from 50 Ω source) +8 dBm T C Operating Baseplate Temperature -30 to +85 °C T STG Storage Temperature Range -55 to +125 °C R JC Thermal Resistance (Channel to Backside) 36.5 °C/W Device
©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001
Electrical Characteristics
(At 25°C), 50 Ω system, Vd = +4V, Quiescent Currrent Idq = 400mA Parameter Min Typ Max Units Frequency Range 21 24 GHz Gate Supply Voltage (Vg) -0.3 V Gain Small Signal at Pin = -8dBm 20 22.5 dB Gain Variation vs. Frequency 1.0 dB Gain at 1dB Compression 21.5 dB Pow er Output at 1dB Compression 24 dBm Pow er Output Saturated: Pin = +3dBm 22 25 dBm Drain Current at Pin = -8dBm 400 mA Drain Current at 1dB Compression 430 mA Drain Current at Saturated: Pin = +3dBm 410 mA Pow er Added Efficiency (PAE): at P1dB 15 % Input Return Loss (Pin = -8dBm) 14 dB Output Return Loss (Pin = -8dBm) 12 dB OIP3 33 dBm Noise Figure 8 dB Note: 1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Figure 3. Recommended Application Schematic Circuit Diagram Figure 4. Recommended Assembly Diagram
2 MIL GAP
5 MIL THICK
©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001 Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 400mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001 Typical Characteristics -40 01 0 2 0 3 0 4 0 50-5-10-15 -30 -20 -10 -20 -15 -10 S21 S22 S11 Pout (GHz) Gain (GHz) GAIN (dB) OUTPUT POWER (dBM) RMWP23001, 23 GHz Power Amplifier, Typical Performance, On-Wafer Measurements, Vd = 4V, Idq = 400mA INPUT POWER (dBm) S21 (dB) S11, S22 (dB) RMWP23001, 23 GHz Power Amplifier, Typical Performance, Vd = 4V, Idq = 370mA, Chip Bonded into 50Ω Test Fixture FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001 18 19 20 21 22 23 24 25 20 21 22 23 24 +30°C (room) -25°C +80°C Gain (mA) P1dB (mA) -400 -435 -435 -400 GAIN (dB) Pout AT 1dB COMPRESSION (dBm) RMWP23001, 23 GHz Power Amplifier, Typical Performance, On-Wafer Measurements, Vd = 4V, Idq = 400mA and 435mA FREQUENCY (GHz) SS GAIN (dB) RMWP23001, Typical Performance Variation with Temperature Vd = 4V, Idq = 400mA, Chip Bonded into 50Ω Test Fixture FREQUENCY (GHz) Typical Characteristics (Continued)
©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001 20 21 22 23 24 +30°C (room) -25°C +80°C P1dB (dBm) RMWP23001, Typical Performance Variation with Temperature Vd = 4V, Idq = 400mA, Chip Bonded into 50Ω Test Fixture FREQUENCY (GHz) Typical Characteristics (Continued)
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™