RMWB12001 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 4 mil Substrate
  • Small-signal Gain 25dB (typ.)
  • 3dB compressed Pout 21dBm (typ.)
  • Voltage Detector Included to Monitor Pout
  • Chip size 2.2mm x 1.7mm Absolute Ratings Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg Negative DC Voltage -2 V Vdg Simultaneous (Vd–Vg) 8 V I D Positive DC Current 207 mA P IN RF Input Power (from 50 Ω source) +8 dBm T C Operating Baseplate Temperature -30 to +85 °C T STG Storage Temperature Range -55 to +125 °C R JC Thermal Resistance (Channel to Backside) 120 °C/W Device

©2004 Fairchild Semiconductor Corporation RMWB12001 Rev. C RMWB12001

Electrical Characteristics

(At 25°C), 50 Ω system, Vd = +4V, Quiescent Current Idq = 96mA Note: Typical range of gate voltage is -0.7 to 0.1V to set typical Idq of 96mA. Parameter Min Typ Max Units Frequency Range 8.5 12 GHz Gate Supply Voltage (Vg) -0.2 V Gain Small Signal (Pin = -15dBm) 23 25 dB Gain Variation vs. Frequency 3.0 dB Pow er Output Saturated: (Pin = -1dBm) 18 21 23 dBm Drain Current Saturated (Pin = -1dBm) 120 220 mA Pow er Added Efficiency (PAE): at Psat 26 % Input Return Loss (Pin = -15dBm) 12 dB Output Return Loss (Pin = -15dBm) 10 dB DC Detector Voltage at Pout = 20dBm 0.5 V

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. Figure 1. Functional Block Diagram

Figure 4. Recommended Assembly Diagram supply voltage of -1.5V to Vg. (iii) Turn down and off gate bias voltage (Vg).

©2004 Fairchild Semiconductor Corporation RMWB12001 Rev. C RMWB12001 Performance Data RMWB12001 12 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd=4 V, Idq = 96 mA Frequency (GHz) S21 (dB) -25 -20 -15 -10 S11, S22 (GHz) S21 S21 S11 S11 S22 S22 S21 (dB) Frequency (GHz) -30 -25 -20 -15 -10 S11, S22 (GHz) RMWB12001 12 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd=4 V, Idq= 96 mA RMWB12001 12 GHz BA, Power Output and Gain at 3 dB Compression Vs. Frequency and Temperature On-Wafer Measurements, Vd=4 V, Idq = 96 mA, T=25°C 8.5 9 9.5 10 10.5 11 11.5 12 Frequency (GHz) P3dB G3dB

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™