RMWB04001

RMWB04001 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 4 mil substrate
• Small-signal gain 27dB (typ.)
• Saturated Power Out 20dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.4mm x 1.3mm x 100µm Absolute Ratings Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg Negative DC Voltage -2 V Vdg Simultaneous (Vd–Vg) 8 V I D Positive DC Current 168 mA P IN RF Input Power (from 50 Ω source) +7 dBm T C Operating Baseplate Temperature -30 to +85 °C T STG Storage Temperature Range -55 to +125 °C R JC Thermal Resistance (Channel to Backside) 140 °C/W Device

©2004 Fairchild Semiconductor Corporation RMWB04001 Rev. C RMWB04001

Electrical Characteristics

(At 25°C), 50 Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA Note: Typical range of gate voltage is -1 to -0.4V to set typical Idq of 36mA. Functional Block Diagram Note: Detector delivers > 0.1V DC into 3k Ω load resistor for > 20dBm output power. If output power level detection is not desired, do not make connection to detector bond pad. Parameter Min Typ Max Units Frequency Range 3.5 4.0 GHz Gate Supply Voltage (Vg) -0.7 V Gain (Small Signal at Pin = -12dBm) 24 27 dB Gain Variation vs. Frequency 0.5 dB Pow er Output Saturated: (Pin = -2dBm) 18 20 dBm Input Return Loss (Pin = -12dBm) 14 dB Output Return Loss (Pin = -12dBm) 12 dB DC Detector Voltage at Pout = 20dBm 0.5 V RF IN RF OUT GROUND (Back of Chip) DRAIN SUPPLY Vd1 DRAIN SUPPLY Vd2 MMIC CHIP OUTPUT POWER DETECTOR VOLTAGE Vdet GATE SUPPLY Vg

©2004 Fairchild Semiconductor Corporation RMWB04001 Rev. C RMWB04001

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material. Figure 1. Chip Layout and Bond Pad Locations Chip Size is 2.40mm x 1.3mm X 100µm. Back of chip is RF and DC Ground.

©2004 Fairchild Semiconductor Corporation RMWB04001 Rev. C RMWB04001 Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 36mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).

©2004 Fairchild Semiconductor Corporation RMWB04001 Rev. C RMWB04001 Performance Data FREQUENCY (GHz) S21 (dB) S21 (dB) S11, S22 (dB) FREQUENCY (GHz) S11, S22 (dB) -30 -25 -20 -15 -10 S22 S11 S21 0123456 -30 -25 -20 -15 -10 S22 S11 S21 PIN (dBm) Pout (dBm) GAIN (dB)3.5 GHz

4.0 GHz

19.8 19.9 20.0 20.1 20.2 FREQUENCY (GHz) P3dB (dBm) G3dB (dBm) 22.0 22.4 22.8 23.2 23.6 P3dB (T = 25°C) P3dB (T = 75°C) G3dB (T = 75°C) G3dB (T = 25°C) Typical Small Signal Performance On-Wafer measurements, Vd = 4V, Idq = 36mA, T = 25°C Power Output and Gain vs. Power In 50Ω Fixture Measurements, Vd = 4V, Idq = 36mA, T = 25°C Power Output and Gain at 3dB vs. Frequency and Temperature 50Ω Fixture Measurements, Vd = 4V, Idq = 36mA

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™