RMSW220D ETC2 | Alldatasheet

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Technical content

255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: sales@radantmems.com SPDT DC to 40 GHz, RF – MEMS

FEATURES

■ High Isolation (20 dB typical @10 GHz) ■ Low Insertion Loss (0.4 dB typical @10 GHz) ■ Typical On Resistance < 3.0 Ω ■ Hermetically Sealed ■ Long Life (>1011 cycles) Electrostatic Actuation, High Off Resis- tance (>1 GΩ), Fast Switching (5 µs), Current Handling (400 mA) ±100V Signal Range, Near Zero Harmonic Distortion, No Quiescent Power Dissipation

DESCRIPTION

The RMSW220D ™ is a Single Pole Double Throw (SPDT) Reflective RF Switch utilizing Radant MEMS Inc. recent breakthrough technology that delivers high-linearity, high- isolation and low-insertion loss in a wafer-scale package. This device is ideally suited for use in many applications such as wire- less (i.e. handsets, WLAN, broad- band wireless access, GPS receiv- ers), RF and Microwave Multi-throw switches, Radar Beam Steering An- tennas, Phase shifters, and RF Test Equipment. Functional Block Diagram Gate Drain Drain Gate Source RF Input Parameters Notes: Product performance specifications and switch operation are for cold switching only. Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch. DC Input Parameters Frequency 5 GHz 10 GHz 25 GHz Insertion Loss < 0.4 dB < 0.5 dB < 0.6 dB Isolation > 25 dB > 20 dB > 17 dB Return Loss < -20 dB < -19 dB < -18 dB Input IP3 (Two-tone inputs 10 GHz and

10.001 GHz @ 27 dBm)

65 dBm RF Power Rating 30 dBm Active Life Cycle, (cold-Switched) 10

2 GHz

< 0.3 dB > 32 dB < -20 dB

35 GHz

< 0.8 dB > 13 dB < -16 dB Actuation Voltage, typ. Actuation Power Consumption 2µW @ 1 kHz switching rate Switch Current, Max. (Cold) 250 mA Switch Current, Max. (Hot) 50 mA Switching Time, Max. (10kHz, Varies with Control Voltage) 5 µs Operating Temperatures - 40 ̊̊C to 85 ̊̊C Storage Temperatures - 55 ̊̊C to 150 ̊̊C RMSW 220D™ Drain Gate 1 Drain 2 Drain 1 Gate 2 Source

255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: sales@radantmems.com SPDT DC to 40 GHz, RF – MEMS Handling Procedures The following precautions should be observed to avoid damage: Static sensitivity — RF MEMS switches integrated circuits are ESD sensitive and can be dam- aged by static electricity. Use proper ESD precautions when handling these devices. Maximum Rating — The absolute maximum input power is 2 watts. Typical Performance Nominal Device Dimensions 300 µm 100 µm RMI 300 µm 1.45 mm 200 µm 1.45 mm 300 µm 100 µm RMI 300 µm 1.45 mm 200 µm 1.45 mm 650 µm 250 µm Bond Pad Gold metal on backside Isolation Insertion Loss 100 µm *Measurement results include the effects of two 1 mil diameter bond wires on each RF pad. dB -10 dB -15 0 -20 -5 -25 -10 -30 -15 -35 -20 -40 -25 -45 -30 -50 -35 -55 -40 -60 -45 S21 - rf1 S21 - rf2 S11 - rf1 S11 - rf2 Isolation Return Loss Start: 50 MHz Stop: 40 GHz 1 2 GHz -34.33 dB 2 5 GHz -26.69 dB 3 10 GHz -19.96 dB 4 15 GHz -16.90 dB 5 20 GHz -17.20 dB 6 25 GHz -19.25 dB 7 30 GHz -16.62 dB 8 35 GHz -13.27 dB dB 0.2 dB 0 0 -0.2 -5 -0.4 -10 -0.6 -15 -0.8 -20 -1 -25 -1.2 -30 -1.4 -35 -1.6 -40 -1.8 -45 S21 - rf1 S21 - rf2 S11 - rf1 S11 - rf2 Insertion Loss Return Loss Start: 50 MHz Stop: 40 GHz 1 2 GHz -0.29 dB 2 5 GHz -0.33 dB 3 10 GHz -0.36 dB 4 15 GHz -0.40 dB 5 20 GHz -0.39 dB 6 25 GHz -0.43 dB 7 30 GHz -0.65 dB 8 35 GHz -0.80 dB 1.37 mm 1.42 mm