RMPA2059

RMPA2059 FAIRCHILD | Alldatasheet

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Features

• 40% CDMA efficiency at +27dBm average output power  Single positive-supply operation and low power and shutdown modes  Meets UTMS/WCDMA and HSDPA performance requirements  Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm  Industry standard pinout  Internally matched to 50Ω and DC blocked RF input/ output General Description The RMPA2059 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Functional Block Diagram Vref Vmode RF IN GND Vcc1 RF OUT GND GND GND BIAS/MODE SWITCH Vcc2 11 (paddle ground on package bottom) INPUT MATCH OUTPUT MATCH MMIC (Top View) Device

RMPA2059 WCDMA Power EdgeTM Power Amplifier Module ©2005 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com RMPA2059 Rev. F Absolute Ratings1 Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Notes: 1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1950MHz, and load VSWR ≤ 1.2:1. 2: All phase angles. 3: Guaranteed by design. Symbol Parameter Min Max Units Vcc1, Vcc2 Supply Voltages 0 5.0 V Vref Reference Voltage 2.7 5.0 V Vmode Power Control Voltage 0 3.0 V Pin RF Input Power – +5 dBm TSTG Storage Temperature -55 +150 °C Symbol Parameter Min Typ Max Units Comments f Operating Frequency 1920 1980 MHz WCDMA Operation Gp Power Gain 26.5 dB Po=+27dBm; Vmode=0V 24 dB Po=+16dBm; Vmode ≥2.0V Po Linear Output Power 27 dBm Vmode=0V 16 dBm Vmode ≥2.0V PAEd PAEd (digital) @ +27dBm 40 % Vmode=0V PAEd (digital) @ +16dBm 9.5 % Vmode ≥2.0V PAEd (digital) @ +16dBm 20 % Vmode ≥2.0V, Vcc=1.4V Itot High Power Total Current 365 mA Po=+27dBm, Vmode=0V Low Power Total Current 120 mA Po=+16dBm, Vmode ≥2.0V Adjacent Channel Leakage Ratio WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ACLR1 ±5.0MHz Offset -40 dBc Po=+27 dBm; Vmode=0V -44 dBc Po=+16 dBm; Vmode ≥2.0V ACLR2 ±10.0MHz Offset -55 dBc Po=+27 dBm; Vmode=0V -63 dBc Po=+16 dBm; Vmode ≥2.0V General Characteristics VSWR Input Impedance 2.0:1 NF Noise Figure 3 dB Rx No Receive Band Noise Power -139 dBm/Hz Po<+27dBm; 2110 to 2170MHz 2fo-5fo Harmonic Suppression3 -30 dBc Po ≤+27 dBm S Spurious Outputs 2,3 -60 dBc Load VSWR ≤ 5.0:1 Ruggedness w/ Load Mismatch3 10:1 No permanent damage T c Case Operating Temperature -30 85 °C DC Characteristics Iccq Quiescent Current 50 mA Vmode ≥2.0V Iref Reference Current 4 8 mA Po ≤+27dBm Icc(off) Shutdown Leakage Current 1 5 µA No applied RF signal

RMPA2059 WCDMA Power EdgeTM Power Amplifier Module ©2005 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com RMPA2059 Rev. F Recommended Operating Conditions1 Note: 1: RF input power for WCDMA Pout = +27dBm. DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) Performance Data Symbol Parameter Min Typ Max Units f Operating Frequency 1920 1980 MHz Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V Vref Reference Voltage Operating Shutdown 2.7 2.85 3.1 0.5 V V Vmode Bias Control Voltage Low-Power High-Power 1.8 2.0 3.0 0.5 V V Pout Linear Output Power High-Power Low-Power +27 +16 dBm dBm Tc Case Operating Temperature -30 +85 °C RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 1920 1950 1980 Frequency (MHz) Gain (dB) RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 1920 1950 1980 Frequency (MHz) PAE (%) RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 -38.0 -36.0 -34.0 -32.0 -30.0 1920 1950 1980 Frequency (MHz) ACLR1 (dBc) RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vre f = 2.85V, Vmode=0V, Pout=27dBm -60.0 -58.0 -56.0 -54.0 -52.0 -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 1920 1950 1980 Frequency (MHz) ACLR2 (dBc)

RMPA2059 WCDMA Power EdgeTM Power Amplifier Module ©2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com RMPA2059 Rev. F 65 6 5 Evaluation Board Layout Materials List Evaluation Board Schematic Qty Item No. Part Number Description Vendor 1 1 G657553-1 V2 PC Board Fairchild 2 2 #142-0701-841 SMA Connector Johnson 3 3 #2340-5211TN Terminals 3M Ref 4 G657637 Assembly, RMPA2059 Fairchild 3 5 GRM39XR102KS0V 1000pF Capacitor (0603) Murata 3 5 (Alt) ECJ-1V81H102K 1000pF Capacitor (0603) Panasonic 2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK 1 7 GRM39YSV104Z16V 0.1µF Capacitor (0603) Murata 1 7 (Alt) ECJ-1VB1CID4K 0.1µF Capacitor (0603) Panasonic A/R 8 SN63 Solder Paste Indium Corp. A/R 9 SN96 Solder Paste Indium Corp 2 1 0 3 , 6, 7, 9 VCC 2 (PA C KAGE BASE) 5 0 Ohm T RL 5 0 S M A 2 R F O U T S M A 1 R F IN Ohm T RL 3 . 3 µ F V R E F 3 . 3 µ F 1000 p F1000 p F 1000 p F 0 . 1 µ F V M O D E VCC 1 1 2059 YWWXX

RMPA2059 WCDMA Power EdgeTM Power Amplifier Module ©2005 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com RMPA2059 Rev. F Package Outline Signal Descriptions Pin # Signal Name Description

1 Vcc1 Reference Voltage

2 RF In High Power/Low Power Mode Control

3 GND Ground

4 Vmode RF Input Signal

5 Vref Supply Voltage to Input Stage

6 GND Ground

7 GND Ground

8 RF Out RF Output Signal

9 GND Ground

10 Vcc2 Supply Voltage to Output Stage

11 GND Paddle Ground

DETAIL A. TYP. (4.00mm 1.60mm MAX. .30mm TYP. .18mm 3.65mm .85mm TYP. .25mm TYP. 1.08mm 1.84mm 3.50mm TYP. See Detail A ) SQUARE+.100 –.050 .40mm .10mm .10mm .40mm .45mm 2059 YWWXX 2059YWWXX

RMPA2059 WCDMA Power EdgeTM Power Amplifier Module ©2005 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com RMPA2059 Rev. F Applications Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage:  Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas.  Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues.  Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices.  General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid.  Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly.  Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature.  Assemble the dry-baked devices within 7 days of removal from the oven.  During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C  If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated.

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION . As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I15 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ©2005 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com RMPA2059 Rev. F