RMPA0967

RMPA0967 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

■ Single positive-supply operation with low power and shut- down modes ■ 39% CDMA/WCDMA efficiency at +28 dBm average output power ■ 52% AMPS mode efficiency at +31 dBm output power ■ Compact lead-free compliant LCC package (3.0 X 3.0 x 1.0 mm) ■ Internally matched to 50 Ohms and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance require- ments ■ Meets HSDPA performance requirements ■ Alternative pin-out to Fairchild RMPA0965 General Description The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to

50 Ohms to minimize the use of external components and fea-

tures a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power- added efficiency and excellent linearity are achieved using Fair- child RF’s InGaP Heterojunction Bipolar Transistor (HBT) pro- cess. Device Functional Block Diagram Vcc2 RF OUT GND GNDVref Vmode RF IN Vcc1 (paddle ground on package bottom) (Top View) DC Bias Control Input Match Output Match MMIC

2 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Absolute Ratings1 Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Notes: 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR O 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design. Parameter Symbol Value Units Supply Voltages Vcc1, Vcc2 5.0 V Reference Voltage Vref 2.6 to 3.5 V Power Control Voltage Vmode 3.5 V RF Input Power Pin +10 dBm Storage T emperature Tstg -55 to +150 °C Parameter Symbol Min Typ Max Units Comments Operating Frequency C f8 2 4 8 4 9 M H z CDMA Operation Small-Signal Gain SSg 28 dB Po = 0dBm Power Gain Gp 29 dB Po = +28dBm; Vmode = 0V 27 dB Po = +16dBm; Vmode P 2.0V Linear Output Power Po 28 dBm Vmode = 0V 16 dBm Vmode P 2.0V PAEd (digital) @ +28dBm PAEd 39 % Vmode = 0V PAEd (digital) @ +16dBm 9 % Vmode P 2.0V PAEd (digital) @ +16dBm 25 % Vmode P 2.0V, Vcc = 1.4V High Power Total Current Itot 480 mA Po = +28dBm, Vmode = 0V Low Power Total Current 130 mA Po = +16dBm, Vmode P 2.0V Adjacent Channel Power Ratio IS-95 A/B Modulation ±885KHz Offset ACPR1 -50 dBc Po = +28dBm; Vmode = 0V -52 dBc Po = +16dBm; Vmode P 2.0V ±1.98MHz Offset ACPR2 -60 dBc Po = +28dBm; Vmode = 0V -70 dBc Po = +16dBm; Vmode P 2.0V AMPS Operation Gain Gp 28 Po = +31dBm Power-Added Efficiency (analog) PAEa 52 % Po = +31dBm General Characteristics Input Impedance VSWR 2.0:1 2.5:1 Noise Figure NF 4 dB Receive Band Noise Power Rx No -137 dBm/Hz Po O +28dBm; 869 to 894MHz Harmonic Suppression3 2fo-5fo -30 dBc Po O +28dBm Spurious Outputs2, 3 S -60 dBc Load VSWR < 5.0:1 Ruggedness w/ Load Mismatch 3 10:1 No permanent damage. Case Operating T emperature Tc -30 85 °C DC Characteristics Quiescent Current Iccq 60 mA Vmode P 2.0V Reference Current Iref 5 8 mA Po O +28dBm Shutdown Leakage Current Icc(off) 1 5 µA No applied RF signal.

3 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Performance Data 824 836.5 849 Frequency (MHz) 824 836.5 849 Gain (dB) Frequency (MHz) PAE(%) RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod 400 410 420 430 440 450 460 470 480 490 500 824 836.5 849 Frequency (MHz) -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 824 836.5 849 Frequency (MHz) Icc(mA) ACPR1(dBc) RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod -70 -68 -66 -64 -62 -60 -58 -56 -54 -52 -50 824 836.5 849 Frequency (MHz) RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod ACPR2(dBc)

4 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Efficiency Improvement Applications In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers fre- quently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC powe r consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent ma rgin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACPR1 of –52dBc and ACPR2 of less than –61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. Recommended Operating Conditions DC Turn On Sequence 1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2.0V (Pout < 16 dBm) Parameter Symbol Min Typical Max Units Operating Frequency f 824 849 MHz Supply Voltage Vcc1, Vcc2 3.0 3.4 4.2 V Reference Voltage (operating) Vref 2.7 2.85 3.1 V (shutdown) 0 0.5 V Bias Control Voltage (low-power) Vmode 1.8 2.0 3.0 V (high-power) 0 0.5 V Linear Output Power (high-power) Pout +28 dBm (low-power) +16 dBm Case Operating Temperature Tc -30 +85 °C

5 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Evaluation Board Layout Materials Evaluation Board Schematic QTY ITEM NO. PART NUMBER DESCRIPTION VENDOR 1 1 F100010 V1 PC, BOARD FAIRCHILD 2 2 #142-0701-841 SMA CONNECTOR JOHNSON 7 3 #2340-5211TN TERMINALS 3M REF 4 ASSEMBLY, RMPA0967 FAIRCHILD 2 5 GRM39X7R102K50V 1000pF CAPACITOR (0603) MURATA 2 5 (ALT) ECJ-1VB1H102K 1000pF CAPACITOR (0603) PANASONIC 2 6 C3216X5R1A335M 3.3µF CAPACITOR (1206) TDK 1 7 GRM39Y5V104Z16V 0.1µF CAPACITOR (0603) MURATA 1 7 (ALT) ECJ-1VB1C104K 0.1µF CAPACITOR (0603) PANASONIC 1 8 GRM39X7R331K50V 330 pF CAPACITOR (0603) MURATA A/R 9 SN63 SOLDER PASTE INDIUM CORP. A/R 100 SN96 SOLDER PASTE INDIUM CORP. 5 7 0967 XYTT Z F SMA1 RF IN Vcc2 (package base)

50 Ohm TRL

3.3 µF Vcc1 3.3 µ 330 pF1000 pF 1000 pF 0.1 µF Vmode SMA2 RF OUT 1Vref 0967 XYTT Z

6 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Package Outline Signal Descriptions Pin # Signal Name Description

1 Vref Reference Voltage

2 Vmode High-Power/Low-Power Mode Control

3 RF In RF Input Signal

4 Vcc1 Supply Voltage to Input Stage

5 Vcc2 Supply Voltage to Output Stage

6 GND Ground

7 RF Out RF Output Signal

8 GND Ground

3.00 1.10mm MAX. 4X R.20mm 2.65mm 0.40mm 0.40mm 0.40mm0.10mm DETAIL A TYP. 0.10mm BOTTOM VIEW SEE DETAIL A 0.80mm 1.40mm 0.175mm mm SQ.+.100 –.050 I/O 1 INDICATOR BACK SIDE SOLDER MASK Z 0967XYTT 0967 XYTT Z

7 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module

Application Information

Precautions to Avoid Permanent Device Damage:  Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas.  Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues.  Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices.  General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid.  Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment.  Device Usage: Fairchild recommends the following proce- dures prior to assembly. – Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. – Assemble the dry-baked devices within 7 days of removal from the oven. – During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C – If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended.  Reflow Profile – Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2°C/sec. – Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150°C. – Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220°C, with a maximum limit of 225°C. – Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. Recommended Solder Reflow Profile 100 120 140 DEG (°C) TIME (SEC)

10 SEC

183°C 1°C/SEC 1°C/SECSOAK AT 150°C FOR 60 SEC

45 SEC (MAX)

ABOVE 183°C 160 180 200 220 240 0 60 120 180 240 300

8 www.fairchildsemi.com RMPA0967 Rev. E RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I15 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™