RMP6N60LD RECTRON | Alldatasheet

Document overview

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Technical content

*HQHUDO'HVFULSWLRQ 9'66 9 ,' $ 5'6 ȍ &UVV S) 6\\PERO 3DFNDJH is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss, enhancing the avalanche energy. RMP6N60LD (IP)(TI)(T2) RMP6N60 N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES

  • Low Crss
  • Low gate charge
  • Fast switching
  • Improved ESD capability
  • Improved dv/dt capability
  • 100% avalanche energy test
  • High efficiency swith mode power supplies

APPLICATIONS

  • Electronic lamp ballasts
  • UPS RMP6N60IP 6N60 O RMP6N60LD RMP6N60TI RMP6N60T2 TO-251 TO-252 TO-220F TO-220 6N60 6N60 6N60 2017-02 REV:O1

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Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE