RMP3N80LD RECTRON | Alldatasheet

Document overview

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Technical content

Features

/g122 800V,3A RDS˄ON˅4.8¡˜VGS=10V TYP:3.8¡ /g122 Low gate charge /g122 Low Crss /g122 Fast switching /g122 Improved dv/dt capability

Applications

/g122 AC-DC power suppliers, /g122 DC-DC converters /g122 H-bridge PWM motor drivers Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity (PCS) 3N80 RMP3N80LD TO-252 2500 ABSOLUTE MAXIMUM RATINGS (Ta=25ćć unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS f30 V Continuous Drain Current (Tc =25ć) ID A Continuous Drain Current (Tc =100ć) ID 1.9 A Pulsed Source Current (1) Ism A Pulsed Drain Current (1) IDM A Single Pulsed Avalanche Energy (2) EAS 173 mJ Power Dissipation PD W Thermal Resistance from Junction to Case RθJC 1.56 ć/W Thermal Resistance from Junction to Ambient RθJA 110 ć/W Junction Temperature TJ 150 ć Storage Temperature TSTG -55~ +150 ć TO-252 RMP3N80LD Halogen-free/g122 2023-06/59 REV:O

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25ćć unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250μA 800 V Zero gate voltage drain current IDSS VDS =800V, VGS = 0V,TJ=25ć μA Gate-body leakage current IGSS VGS =f30V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =250μA 2.0 4.0 V Drain-source on-resistance(3) RDS(on) VGS =10V, ID =1.5A 3.8 4.8 Ω Dynamic characteristics Input Capacitance Ciss VDS =25V, VGS =0V, f =1.0MHz 390.3 pF Output Capacitance Coss 42.7 Reverse Transfer Capacitance Crss 2.0 Switching characteristics Turn-on delay time td(on) VDD=400V, ID=3A, RG=25Ω 13.87 ns Turn-on rise time tr 30.53 Turn-off delay time td(off) 22.40 Turn-off fall time tf 18.27 Total Gate Charge Qg VDS=640V, ID=3A, VGS=10V 9.00 nC Gate-Source Charge Qgs 2.46 Gate-Drain Charge Qgd 3.74 Source-Drain Diode characteristics Diode Forward voltage VSD TJ=25ć, VGS =0V, IS=3A 1.4 V Diode Forward current IS TC=25ć 3.0 A Body Diode Reverse Recovery Time trr TJ=25ćˈIF=3A,di/dt=100A/us 190 ns Body Diode Reverse Recovery Charge Qrr TJ=25ćˈIF=3A,di/dt=100A/us 0.53 uc Notes: 1. L=30mH, IAS=3.15A, VDD=100V, RG=25Ω, starting TJ=25°C; Pulse Test: Pulse width İ300­s,Duty cycleİ2%; Essentially independent of operating temperature.

Capasistance(pF) Gate-Source Voltage/g12 VGS(V) RATING AND CHARACTERISTICS CURVES (RMP3N80LD)

Voltage(Normalized) /g12 BVDSS(V) Drain-Source On-Resistance (Normalized) /g12 RDS(ON)(Ω) Drain Current - ID(A) Drain Current - ID(A) SFM/DD3N80 SFU3N80 Drain Current - ID(A) Drain Current - ID(A) (SFF3N80) (SFP3N80) RATING AND CHARACTERISTICS CURVES (RMP3N80LD)

  • ID(A) RATING AND CHARACTERISTICS CURVES (RMP3N80LD)

Ω 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit Waveform Resistive Switching Test Circuit Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

TO-252 UNIT: mm 10.10/g150.50 6.1/g150.3 0.80/g150.20 1.4/g131.7 2.90REF PACKAGE OUTLINE(continued)

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