RMP12N60TI RECTRON | Alldatasheet

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Technical content

  • Low Cr ss
  • Low gate cha rge
  • Fast switchi ng
  • Improved ESD capabil ity
  • Improved dv/dt capabil ity
  • 100% avalanche energy t est
  • High efficiency swith mode power suppl ies APPLICATIO NS
  • Electronic lamp balla sts
  • UPS 2018-11 / 27 REV:O N-CHANNEL ENHANCEMENT MODE MOSF ET RMP12N60 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction los s, enhancing the avalanche energ y. 600 0.70 O TO-220F TO-220 12N60 12N60 RMP12N60TI RMP12N60 RMP12N60TI RMP12N60T2

C = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 12 A Continuous I D 12 A Drain Current Pulsed (Note 2) I DM 48 A Single Pulsed (Note 3) E AS 790 mJ Avalanche Energy Repetitive (Note 2) E AR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 225 W TO-220F 51 W Power Dissipation P D Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 10mH, I AS = 12A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 4. I SD ≤ 12A, di/dt ≤200A/s, V DD ≤BV DSS Starting T J = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220/TO-220F 62.5 °C/W Junction to Ambient θ JA TO-220 0.56 °C/W TO-220F 2.43 °C/W Junction to Case θ JC

ELECTRICAL CHARACTERISTICS

C =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 600 V Drain-Source Leakage Current I DSS V DS = 650 V, V GS = 0 V 1 µA Gate-Source Leakage Current I GSS V GS = ±30 V, V DS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient BV DSS /△T J I D =250µA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D = 6.0A 0.52 0.70 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1480 1900 pF Output Capacitance C OSS 200 270 pF Reverse Transfer Capacitance C RSS V DS = 25 V, V GS = 0 V, f = 1MHz 25 35 pF SWITCHING CHARACTERISTICS Total Gate Charge Q G 42 54 nC Gate-Source Charge Q GS 8.6 nC Gate-Drain Charge Q GD V DS = 520V,I D = 12A, V GS = 10 V (Note 1, 2) 21 nC Turn-On Delay Time t D(ON) 30 70 ns Turn-On Rise Time t R 115 240 ns Turn-Off Delay Time t D(OFF) 95 200 ns Turn-Off Fall Time t F V DD = 325V, I D = 12A, R G = 25Ω (Note 1, 2) 85 180 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current I S 12 A Maximum Pulsed Drain-Source Diode Forward Current I SM 48 A Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 12A 1.4 V Reverse Recovery Time t rr 380 ns Reverse Recovery Charge Q rr V GS = 0 V, I S = 12A, dI F /dt = 100 A/µs (Note 1) 3.5 µC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

RATIN G AND CHARACTERISTI CS CURVES (RMP12N60TI/T2)

Drain Current, I D (A) Thermal Response, Z θJC (t) RATIN G AND CHARACTERISTI CS CURVES (RMP12N60TI/T2)

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