RMP10N60HD RECTRON | Alldatasheet

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/g721/g721/g721/g721 100% Avalanche Test BVDSS 600V /g721/g721/g721/g721 Fast Switching Characteristic RDS(ON) 0.6/g543 /g721/g721/g721/g721 Simple Drive Requirement ID 10A /g721/g721/g721/g721 RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25/g599Drain Current, VGS @ 10V A ID@TC=100/g599Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25/g599Total Power Dissipation W PD@TA=25/g599Total Power Dissipation4 W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG /g599 TJ Operating Junction Temperature Range /g599 Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.72 /g599/W Rthj-a 40 /g599/W 174 6.5 -55 to 150 Parameter + 30 Rating 600 Storage Temperature Range -55 to 150 Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)4 3.13 G D S G D S TO-263and silicon process tec hnology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. 2019-12/99 REV:O RMP10N60HD is from Advanced Power innovated design N-CHANNEL ENHANCEMENT MODE POWER MOSFET RMP10N60HD

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=5A - - 0.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4.5 V gfs Forward Transconductance V DS=10V, ID=5A - 5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=10A - 34 57 nC Qgs Gate-Source Charge V DS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 11 - nC td(on) Turn-on Delay Time V DD=300V - 19 - ns tr Rise Time I D=10A - 28 - ns td(off) Turn-off Delay Time R G=10/g543 -4 3- ns tf Fall Time V GS=10V - 22 - ns Ciss Input Capacitance V GS=0V - 2030 3250 pF Coss Output Capacitance V DS=25V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=10A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=10A, VGS=0V, - 600 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1.0mH , RG=25/g543 , IAS=10A. 3.Pulse test 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V V G =5.0V 0.4 0.8 1.2 1.6 2.4 2.8 3.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V G =10V 048 1 2 1 6 2 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7. 0 V 6. 0 V V G =5 0V 0.1 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o CT j = 25 o C 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) RATING AND CHARACTERISTICS CURVES (RMP10N60HD)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 2 04 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A V DS =480V 800 1600 2400 3200 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge RATING AND CHARACTERISTICS CURVES (RMP10N60HD)

Date Code (YWWSSS) Y/g28873Last Digit Of The Year WW/g28873Week SSS/g28873Sequence 3990S YWWSSS TO-263 FOOTPRINTΚ 2.54mm 10.5mm 10.5mm 1.2mm 2m m 4mm 2.54mm Pin1

Package Outline : TO-263 Millimeters MIN NOM MAX A 4.00 4.75 5.20 A1 0.00 0.15 0.30 b 0.50 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.55 0.80 c1 1.10 1.40 1.70 D 8.30 9.05 9.80 E 9.50 10.10 10.70 e 2.04 2.54 3.04 L3 3.50 4.50 5.50 Ӱ 0° ----- 8° 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 2.54(ref) 1.5 (ref) SYMBOLS 1.27(ref) 5.10(ref) 7.00Д9.00(ref)b e A /g637 c E D A /g637

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