RMM2080 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- 2–18GHz Bandwidth
- 24dB Typical Gain
- ±2dB Gain Flatness
- 20dBm Output Power Typical
- Three Stages of Distributed Amplification
- Gain Control of up to 70dB range
- Dual-Gate Ion-Implanted 0.5µm FETs
- Chip Size: 4.14mm x 3.22mm x 0.1mm Absolute Ratings Symbol Parameter Ratings Units Vd Positive Drain DC Voltage (+7V Typ) +8 V Vg Negative DC Voltage -2 V Vgd Simultaneous (Vd-Vg) 10 V Id Positive DC Current 400 mA P IN (CW) RF Input Power (from 50 Ω source) +8 dBm T CASE Operating Baseplate Temperature -30 to +85 °C T STORAGE Storage Temperature Range -55 to +125 °C R JC Thermal Resistance (Channel to Backside) 22 °C/W Device
©2004 Fairchild Semiconductor Corporation RMM2080 Rev. C RMM2080
Electrical Characteristics
(at 25°C) Ω system, Vd = +7V, quiescent current (Idq) = 300 mA, GC1, GC2 = +1.5V Notes: 1. Typical range of the negative gate voltage is -0.9 to 0.0V to set typical Idq of 300 mA. 2. GC1 and GC2 of +1.5V and VG23 = open corresponds to maximum gain and power. Figure 1. Block Diagram and Circuit Schematic Figure 2. Location and Size of Bonding Pads (Dimensions in Inches)
0.025 VG1
Figure 3. Example of Assembled Module
3 Places
2 Places
©2004 Fairchild Semiconductor Corporation RMM2080 Rev. C RMM2080 Performance Data The above data is derived from fixtured measurements which include 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the RF input and output. The Id @ 1dB compression increases to approximately 0.45 A. The dc supply should be able to support the required current to achieve the above performance. 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 Vcontrol (V) 2GHz 10GHz 18GHz Gain Return Loss (dB) Gain (dB) Gain (dB) P1 (dBm) Frequency (GHz) Input & Output Return Loss Vd=7.0V, Id=0.3A, GC1,2=1.5V Small Signal Gain Vd=7.0V, Id=0.3A, GC1,2=1.5V Gain & Pout vs, Control Voltage Vd=7.0V, Id=0.3A @ GC1,2=1.5V 02468 1 2 10 14 16 18 20 Frequency (GHz) 02468 1 2 10 14 16 18 20 S22 S11
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