RMDA29000

RMDA29000 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 22dB small signal gain (typ.)
• 23dBm saturated power out (typ.)
• Circuit contains individual source Vias
• Chip Size 3.41mm x 1.62mm Absolute Ratings Symbol Parameter Ratings Units Vd Positive DC Voltage (+5V Typical) +6 V Vg Negative DC Voltage -2 V Vdg Simultaneous (Vd–Vg) +8 V I D Positive DC Current 360 mA P IN RF Input Power (from 50 Ω source) +10 dBm T C Operating Baseplate Temperature -30 to +85 °C T STG Storage Temperature Range -55 to +125 °C R jc Thermal Resistance (Channel to Backside) 38 °C/W Device

©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C RMDA29000

Electrical Characteristics

(At 25°C), 50 Ω system, Vd = +5V, Quiescent current (Idg) = 250mA Note: Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 250mA. 10MHz tone separation measured at 10dBm Power Out/tone. Parameter Min Typ Max Units Frequency Range 27 31 GHz Gate Supply Voltage (Vg) -0.4 V Gain Small Signal 18 22 28 dB Gain Variation vs. Frequency ±1 dB Pow er Output at 1dBm Compression 21 dBm Pow er Output Saturated: (Pin = +4dBm) 21 23 dBm Drain Current Small Signal 250 mA Drain Current at P1dB Compression 270 mA Pow er Added Efficiency (PAE): at P1db 8 % OIP3 30 dBm Input Return Loss 5 10 dB Output Return Loss 5 8 dB

Figure 3. Recommended Application Schematic Circuit Diagram Figure 4. Recommended Assembly Diagram Vd should be biased from 1 supply as shown. Vg should be biased from 1 supply.

2 MIL GAP

©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C RMDA29000 0.1µF 0.47µF LM2941T U1A 7400 3.0k 1.0k D1N6098 +6V D1N6098 –2.62V 1.2k 6.8k U2 0 0.1µF MMIC_–VG 22µF 0.1µF 8.2k *Adj. For –Vg –5V Off: –5V Off: +3.33V +1.80V 1.0k –5V MMIC_+VDD CNT IN GND OUT ADJ AD820/AD Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 250mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.

©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C RMDA29000 -20 -15 -10 24 25 26 27 28 S21 RMDA29000 S-Parameters vs. Frequency 5V, 250mA, T = 25°C RMDA29000 S21 vs. Frequency Over Temperature 5V, 250mA S22 -35°C +85°C +25°C S11 FREQUENCY (GHz) FREQUENCY (GHz) Sij (dB)S21 (dB) 30 31 32 33 34 26 27 28 29 30 31 32 Typical Characteristics

©2004 Fairchild Semiconductor Corporation RMDA29000 Rev. C RMDA29000 RMDA29000 Gain vs. Pout 5V, 250mA, T = 25°C RMDA29000 PIP3 vs. Pout/Tone 10 MHz Tone Sep 5V, 250mA, T = 25‚C Pout (GHz) Pout/TONE (dBm) GAIN (dB)OIP3L (dBm) 30GHz 30GHz 29GHz 29GHz 31GHz 31GHz 28GHz 28GHz 27GHz 27GHz 10 15 20 25 05 1 0 15 20 25 Typical Characteristics (Continued)

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™