RMD7N20ED2 RECTRON | Alldatasheet
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/g12220V,6.8A R DS ON m¡˜V GS =4.5V TYP=13 m ¡ R DS ON m¡˜V GS =2.5V TYP=16 m ¡ /g122Advanced Trench Technology /g122Lead free product is acquired /g122E S D > 2 K V Application /g122I n t e r f a c i n g S w i t c h i n g /g122Load Switching /g122Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity (PCS) D7N20 RMD7N20ED2 PDFN2X2 - 3000 ABSOLUTE MAXIMUM RATINGS (T a =25ćć unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Continuous Drain Current (T a =25ć)I D 6.8 A Continuous Drain Current (T a =70ć)I D 4.4 A Pulsed Drain Current I DM 27 A Power Dissipation P D 1.6 W Thermal Resistance from Junction to Ambient (4) R θJA \`78 ć/W Junction Temperature T J 150 ć Storage Temperature T STG -55~ +150 ć PDFN2X2 RMD7N20ED2 N -Channel Enhancement MOSFET /g122Halogen-free 2022-04/59 REV:O
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25ćć unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, ID =250μA 20 - - V Zero gate voltage drain current I DSS V DS =20V, VGS = 0V - - 1 μA Gate-body leakage current I GSS VGS =ά10V,VDS = 0V - - ±5000 nA Gate threshold voltage(3) V GS(th) V DS =VGS, ID =250μA 0.3 0.7 1.0 V Drain-source on-resistance(3) R DS(on) VGS =4.5V, ID =6A - 13 15 mΩ VGS =2.5V, ID =3A - 16 22 Dynamic characteristics Input Capacitance C iss VDS =10V, VGS =0V, f =1MHz - 780 - pF Output Capacitance C oss - 140 - Reverse Transfer Capacitance C rss - 80 - Switching characteristics Turn-on delay time t d(on) VDD=10V, ID=3.5A, VGS=4.5V, RG=10Ω - 9 - ns Turn-on rise time t r - 30 - Turn-off delay time t d(off) - 35 - Turn-off fall time t f - 10 - Total Gate Charge Qg VDS=10V, ID=3.5A, VGS=4.5V - 11 - nC Gate-Source Charge Qgs - 2.3 - Gate-Drain Charge Qgd - 2.9 - Source-Drain Diode characteristics Diode Forward voltage(3) V DS V GS =0V, IS=4A - - 1.2 V Diode Forward current(4) I S - - 6.8 A Notes: 1. Repetitive Rating: pulse width limited by maximum junction temperature 2. Pulse Test: pulse width≤300μs, duty cycle≤2% 3. Surface Mounted on FR4 Board,t≤10 sec
RATING AND CHARACTERISTICS CURVES (RMD7N20ED2)
RATING AND CHARACTERISTICS CURVES (RMD7N20ED2)
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