RMD2060S6 RECTRON | Alldatasheet

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Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The RMD2060S6 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ƽ V DS = 20V,I D = 2.8A R DS(ON) <80mȍ @ V GS =2.5V R DS(ON) < 55mȍ @ V GS =4.5V ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface Mount Package Application ƽ Battery protection ƽ Load switch ƽ Power management SOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity D2060 ƽ Halogen-free RMD2060S6 N-Channel MOSFET G D S N-Channel MOSFET G D S D2G2 S1S2 D1G1 2023-06/59 REV:O SOT23-6L Ø180mm 8mm 3000 units RMD2060S6

RATIN G AND CHARACTERISTI CS CURVES (RMD2060S6)

RATIN G AND CHARACTERISTI CS CURVES (RMD2060S6)

Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.450 - 0.057 - A1 0.100 0.000 0.004 0.000 A2 1.300 1.050 0.051 0.041 b 0.500 0.300 0.020 0.012 c 0.200 0.100 0.008 0.004 D 3.100 2.700 0.122 0.106 E 1.800 1.400 0.071 0.055 E1 3.000 2.600 0.118 0.102 e 0.95BSC 0.037BSC e1 2.000 1.800 0.079 0.071 L1 0.600 0.300 0.024 0.012 ș 10° 0° 10° 0° SOT23-6 PACKAGE INFORMATION

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