RMD1N25ES9 RECTRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The RMD1N25ES9 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features V DS = 25V,I D =1.1A R DS(ON) GS =4.5V R DS(ON) GS =2.5V High power and current handing capability Lead free product is acquired Surface mount package Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 1N25 RMD1N25ES9 SOT-363 Ø180mm 8mm 3000units Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±12 V T A =25 1.1 Continuous Drain Current I D A Pulsed Drain Current (Note 1) I DM Maximum Power Dissipation T A =25 P D 0.8 W Operating Junction and Storage Temperature Range T J STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient R 156 /W RMD1N25ES9 Halogen-free 2019-03/15 REV:O 550 650 SOT-363 4OP6IEW 1 or 4 6 or 3 5 or 2 4 or 1 2 or 5 3 or 6 A V P/N suffix V means AEC-Q101 qualified, e.g:RMD1N25ES9V

Electrical Characteristics ( A 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS =0V , I DS = 250 μA 25 V VGS(th) Gate Threshold Voltage V DS =V GS,I DS = 250 μA 0.4 1.1 V IDSS Drain Leakage Current VDS =2 5V ,V GS =0V - - 1 μ A TJ =8 5 ഒ -- 3 0 μ A IGSS Gate Leakage Current V GS =±1 0V ,V DS =0V - - ±1 0 μ A RDS(ON)a On-State Resistance VGS =4 . 5V ,IDS = 0.5 A - 0.5 0.6 VGS =2 . 5V ,IDS = 0.2 A - 0.55 0.7 Diode Characteristics VSDa Diode Forward Voltage I SD =0 . 5A ,VGS =0V - - 1 . 3 V trr Reverse Recovery Time ISD =0 . 5A ,d lSD /d t=1 0 0A/μ s -4 0-n s Qrr Reverse Recovery Charge - 39 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS =0V ,V DS =1 0V Frequency = 1 MHz -3 0- pFCoss Output Capacitance - 3 - Crss Reverse Transfer Capacitance - 1 - td(on) Turn-on Delay Time VDS =3 0V ,V GEN =1 0V , RG =2 5Ω ,R L =6 0Ω , IDS =0 . 9 5A -3 . 6- ns tr Turn-on Rise Time - 3.3 - td(off) Turn-off Delay Time - 20 - tf Turn-off Fall Time - 11 - Qg Total Gate Charge VGS =4 . 5V ,VDS =1 0V , IDS =0 . 9 5A -0 . 6- pCQgs Gate-Source Charge - 0.26 - Qgd Gate-Drain Charge - 0.17 - Notes烉 a : Pulse test ; pulse width ≤300 μs, duty cycle ≤2% b : Guaranteed by design, not subject to production testing

Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (ƱƱC) T j - Junction Temperature (ƱC) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 1E-3 0.01 0.1 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC 300us RATING AND CHARACTERISTICS CURVES (RMD1N25ES9)

Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (Ω) VDS - Drain-Source Voltage (V) I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage RDS(ON) - On Resistance (Ω) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS= 4.5V VGS= 2.5 V -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS = 250 μA 123456789 1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID= 0.5 A 3.0 V 2.0 V 1.0 V RATING AND CHARACTERISTICS CURVES (RMD1N25ES9)

Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 RON@Tj= 25 o C: 0.5 Ω VGS= 4.5 V ID = 0.5 A 0.1 Tj= 150 o C Tj =25 o C 0 5 10 15 20 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= 10 V IDS= 0.95 A RATING AND CHARACTERISTICS CURVES (RMD1N25ES9)

PKG Reel Box pcs/reel reel/box pcs/box box/carton pcs/carton 7āSOT363 3000 10 30000 4 120000

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE