RMD0A8P20ES9 RECTRON | Alldatasheet

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Technical content

P-Channel Enhancement Mode Power MOSFET

Description

The RMD0A8P20ES9 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features V DS = -20V,I D = -0.8A R DS(ON) GS =-4.5V R DS(ON) GS =-2.5V High power and current handing capability Lead free product is acquired Surface mount package Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0A8P20 RMD0A8P20ES9 SOT-363-6L Ø180mm 8mm 3000units Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol P-Channel Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V T A =25 - 0.8 Continuous Drain Current I D A Pulsed Drain Current (Note 1) I DM -4 A Maximum Power Dissipation T A =25 P D 0.8 W Operating Junction and Storage Temperature Range T J STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient R 156 /W RMD0A8P20ES9 Halogen-free 800 1200 SOT-363 4OP6IEW P/N suffix V means AEC-Q101 qualified, e.g:RMD0A8P20ES9V 2023-02 REV:A

Electrical Characteristics

A 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V , I DS = -250 μA -20 V V GS(th) Gate Threshold Voltage V DS GS DS I DSS Drain Leakage Current V DS =- 2 0V ,V GS =0V - - - 1 μ A T J =8 5 ഒ -- - 3 0 μ A I GSS Gate Leakage Current V GS =±8V ,V DS =0V - - ±1 0 μ A R DS(ON)a On-State Resistance V GS =- 4 . 5V ,I DS V GS =- 2 . 5V ,I DS V GS =- 1 . 5 V,I DS = -0.04A - 1.5 - V GS =- 1 . 2 V,I DS =- 0 . 0 1 A - 2 - Diode Characteristics V SDa Diode Forward Voltage I SD =- 0 . 5A ,V GS =0V - - 1 . 3 V t rr Reverse Recovery Time I SD =- 0 . 5A ,d l SD /d t=1 0 0A/μ s -7 0-n s Q rr Reverse Recovery Charge - 68 - nC Dynamic Characteristics b C iss Input Capacitance V GS =0V ,V DS =- 1 0V Frequency = 1 MHz pFC oss Output Capacitance - C rss Reverse Transfer Capacitance - 8.2 t d (on) Turn-on Delay Time V DS =- 3 0V ,V GEN =- 1 0V , R G =2 5Ω ,R L =6 0Ω , I DS =- 0 . 6 7A -5 . 6- ns t r Turn-on Rise Time - 5.3 - t d (off) Turn-off Delay Time - 30 - t f Turn-off Fall Time - 21 - Q g Total Gate Charge V GS =- 4 . 5V ,V DS =- 1 0V , I DS =- 0 . 6 7A -1 . 8- nCQ gs Gate-Source Charge - 0.82 - Q gd Gate-Drain Charge - 0.59 - Notes烉 a : Pulse test ; pulse width ≤300 μ s, duty cycle ≤2% b : Guaranteed by design, not subject to production testing

Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (ƱƱC) T j - Junction Temperature (ƱC) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient -VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TA=25 o C,VG= -4.5V 0.01 0.1 1 10 100 1E-3 0.01 0.1 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC RATING AND CHARACTERISTICS CURVES (RMP0A8P20ES9)

Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (Ω) -VDS - Drain-Source Voltage (V) -I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage RDS(ON) - On Resistance (Ω) Normalized Threshold Voltage -VGS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 VGS= -4.5V VGS= -2.5 V -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS = -250 μA 0123456789 1 0 0.5 1.0 1.5 2.0 2.5 3.0 ID= -0.5 A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2.0 V -1.0 V RATING AND CHARACTERISTICS CURVES (RMP0A8P20ES9)

Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) Tj - Junction Temperature (°C) -V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 RON@Tj= 25 o C: 0.85 Ω VGS= -4.5 V ID = -0.5 A 0.1 Tj= 150 o C Tj =25 o C 0 5 10 15 20 100 120 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= -10 V IDS= -0.67 A RATING AND CHARACTERISTICS CURVES (RMP0A8P20ES9)

PKG Reel Box pcs/reel reel/box pcs/box box/carton pcs/carton 7āSOT363 3000 10 30000 4 120000

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