RMB2S SSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Surface Mount Bridge Rectifiers 12/23/2007 Rev.1.00 www.SiliconStandard.com 1 RMB2S thru RMB6S PRODUCT SUMMARY
0.8 Amps Miniature Glass Passivated
Fast Recovery Surface Mount Bridge Rectifiers
FEATURES
Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability High temperature soldering guaranteed: 260 o C / 10 seconds at 5 lbs., (2.3 kg) tension Small size, simple installation Pure tin plated terminal, Lead free. Leads solderable per MIL-STD-202 Method 208 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Dimensions in inches and (millimeters) .193(4.90) .177(4.50) .033(0.84) .022(0.56) .142(3.60) MAX .087(2.20) .102(2.60) .106(2.70) .090(2.30) .053(1.53) .037(0.95) .014(0.35 .006(0.15 .008(0.20) MAX .114(2.9) MAX .028(0.70) .043(1.10) MBS Pb-free; RoHS-compliant Type Number Symbol RMB2S RMB4S RMB6S Units Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified Current On glass-epoxy P.C.B. On aluminum substrate I(AV) 0.5 0.8 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 0.4A VF 1.0 V Maximum DC Reverse Current @ T A=25 o C at Rated DC Blocking Voltage @ TA=125 o C IR 5.0 100 uA uA Maximum Reverse Recovery Time at (Note 1) Trr 150 nS Typical Junction Capacitance Per Leg Cj 13 pF Typical Thermal Resistance Per Leg RθJA 85 o C /W Operating Temperature Range TJ -55 to +150 o C Storage Temperature Range TSTG -55 to +150 o C Note: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
12/23/2007 Rev.1.00 www.SiliconStandard.com 2 RATINGS AND CHARACTERISTIC CURVES (RMB2S THRU RMB6S) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.1- DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FOR W ARD RECTIFIED CURRENT .(A) AMBIENT TEMPERATURE. ( C) o FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG INST ANT ANEOUS FOR W ARD CURRENT .(A) 0.1 0.01 INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG JUNCTION CAP ACIT ANCE.(pF) 0.1 10 200 REVERSE VOLTAGE. (V) FIG.2- TYPICAL REVERSE LEAKAGE CHARACTERISTICS PER LEG PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 100 0.1 0.01 INST ANT ANEOUS REVERSE LEAKAGE CURRENT FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FOR W ARD SURGE CURRENT .(A) 1 10 100 NUMBER OF CYCLES Ta=40 C Single Half Sine Wave (JEDEC Method) O F=60 HzF=50 Hz
1 Cycle
02 04 06 08 0 100 120 140 160 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Resistive or Inductive Load Aluminum Substrate Glass Epoxy P.C.B. 02 04 06 08 01 00 Tj=125 C0 Tj=25 C0 Pulse Width=300 s 1% Duty Cycle Tj=25 C0 1001 Tj=25 C f=1.0MHz Vsig=50mVp-p
12/23/2007 Rev.1.00 www.SiliconStandard.com 3 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.