RMA9N20S5 RECTRON | Alldatasheet
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Technical content
N-Channel Enhancement Mode Power MOSFET
Description
The RMA9N20S5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =20V,ID =0.87A RDS(ON) < 455mΩ @ V GS=1.8V RDS(ON) < 305mΩ @ VGS=2.5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ SMPS and general purpose applications ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply 100% UIS TESTED! Schematic diagram SOT523 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (TC=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 0.87 A Drain Current-Continuous(TC=100ć)I D (70ć) Pulsed Drain Current IDM 2.2 A Maximum Power Dissipation PD 0.28 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ć Halogen-free
0101 RMA9N20S5 SOT523
0.7 A RMA9N20S5 D G S 2020-07/103 REV:C RDS(ON) < 230mΩ @ VGS=4.5V Preliminary
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0V ID=250μA Zero Gate Voltage Drain Current I DSS VDS=16V,VGS=0V - - 1 μA Gate-Body Leakage Current I GSS VGS=±8V,V DS=0V On Characteristics (Note 3) Gate Threshold Voltage V GS(th) VDS=VGS,ID=250μA VGS=1.8V, ID=0.35A Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=0.55A mΩ Forward Transconductance g FS VDS=5V,ID=0.55A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDS=10V,ID=2A VGS=4.5V,R GEN=3Ω Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=10V,ID=1A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.35A Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = 1A di/dt = 100A/μs(Note3) Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 452 20 - - V 0.5 - V 303- 455 9- - 190- 230 S1.7- - PF 43- - PF 6- - PF 1.2- - nS 25- - nS 14- - nS 15- - nS 2- - nC 0.3- - nC 0.3- - nC 1- - nC 9- - nS - 1.1 V - - μA±10 1.0 VGS=2.5V, ID=0.45A 234- 305 0.75
RATING AND CHARACTERISTICS CURVES (RMA9N20S5)
RATING AND CHARACTERISTICS CURVES (RMA9N20S5)
Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 A1 0.100 0.000 0.004 0.000 A2 0.800 0.700 0.031 0.028 b 0.350 0.250 0.014 0.010 b1 0.250 0.150 0.010 0.006 c 0.200 0.100 0.008 0.004 D 1.750 1.500 0.069 0.059 E 0.900 0.700 0.035 0.028 E1 1.750 1.400 0.069 0.055 e 0.5TYP. 0.02TYP. e1 1.100 0.900 0.043 0.035 L 0.460 0.300 0.018 0.012 L1 0.460 0.260 0.018 0.010 θ 8° 0° 8° 0° SOT523 PACKAGE INFORMATION
/g54/g50/g55/g16/g24/g21/g22/g3/g55/g68/g83/g72/g3/g68/g81/g71/g3/g53/g72/g72/g79
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE