RMA7N20ED1 RECTRON | Alldatasheet
Document overview
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Technical content
V DS = 20V,I D = 0.7A R DS(ON) < 0.26Ω @ V GS =2.5V R DS(ON) < 0.22Ω @ V GS =4.5V Low On-Resistance High fast switching Halogen-free N-Channel Trench MOSFET Load switch DFN1006-3 2023-05/59 REV:A RMA7N20ED1 RMA7N20ED1 Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
1606 RMA7N20ED1 DFN1006-3 Ø180mm 8 mm
Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V T c =25 0.7 Continuous Drain Current (T J =150 T c =100 I D 0.5 A Drain Current-Pulsed (Note 1) I DM 3 A Maximum Power Dissipation P D 0.55 W Operating Junction and Storage Temperature Range T J STG -50 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W Diode Continuous Forward Current I S 0.7 A
RATING AND CHARACTERISTICS CURVES (RMA7N20ED1)
RATING AND CHARACTERISTICS CURVES (RMA7N20ED1)
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