RMA35N50ES5 RECTRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The RMA35N50ES5 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =50V,I D =0.35A R DS(ON) GS =10V ƽ Fast switching speed ƽ Application ƽ Power Management ƽ Load Switching Schematic diagram SOT523 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (T C =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 0.35 A Drain Current-Continuous(T C =100ć)I D (70ć) Pulsed Drain Current I DM 1.05 A Maximum Power Dissipation P D 0.3 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ć Halogen-free K72 RMA35N50ES5 SOT523 0.21 A D G S R DS(ON) < 2.5Ω @ V GS =4.5V RMA35N50ES5 ESD capability > 2KV 2024-04 REV:A < 2.0Ω @ V

Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0V ID=250μA Zero Gate Voltage Drain Current I DSS VDS=16V,VGS=0V - - 1 μA Gate-Body Leakage Current I GSS VGS=±20V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage V GS(th) VDS=VGS,ID=250μA VGS=10V, ID=0.50A Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=0.20A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=30V,ID=0.2A VGS=10V,R GEN=25Ω Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=10V,ID=0.25A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.5A Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = 1A di/dt = 100A/μs(Note3) Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 430 50 - - V 0.8 - V 1.5- 2.0 10- - PF 20- - PF 3.8- - PF 2.5- - nS 3.0- - nS 20- - nS 11- - nS 1.3- - nC 0.2- - nC 0.1- - nC 1- - nC 9- - nS - 1.35 V - - μA±10 1.5 0.85 Ω 1.8 2.5

V = 1.8V V = 2V V = 2.5V V = 3V GSV = 5V GSV = 4.5V GS GS GS GSV = 10V GSV = 3.5V GS 543210 1.5 1.2 0.9 0.6 0.3

0.0 D )A( TNERRUC NIARD ,I

Figure 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V) GSV = 10V GSV = 5V 10.80.60.40.20 0.9 0.8 0.7 0.6 0.5 )NO(SD )( ECNATSISER-NO ECRUOS-NIARD ,R Drain Current and Gate Voltage Figure 3 Typical On-Resistance vs. DI , DRAIN-SOURCE CURRENT (A) D GS I = 500mA V = V D GS I = 300mA V = 5V 1501251007550250-25-50 2.4 2.0 1.6 1.2 0.8 0.4 )NO(SD )DEZILAMRON( ECNATSISER-NO ECRUOS-NIARD ,R Figure 5 On-Resistance Variation with Temperature T , JUNCTION TEMPERATURE ( C) I = 300mA D GS I = 500mA V = V D GSV = 5V 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 )NO(SD )( ECNATSISER-NO ECRUOS-NIARD ,R Figure 6 On-Resistance Variation with Temperature T , JUNCTION TEMPERATURE ( C) 1501251007550250-25-50 V , GATE-SOURCE VOLTAGE (V) GS Figure 2 Typical Transfer Characteristics 0.2 0.4 0.6 0.8 V = 5V DS T = 150° C A T = 125° C A T = 25° C A T = -55° C A T = 85° C A I , DRAIN CURRENT (A) D Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.5 1.5 2.5 0 0.2 0.4 0.6 0.8 1 T = -55° C A T = 25° C A T = 85° C A T = 125° C A T = 150° C A V = 4.5V GS RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) RATIN G AND CHARACTERISTI CS CURVES (RMA35N50ES5 )

Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 A1 0.100 0.000 0.004 0.000 A2 0.800 0.700 0.031 0.028 b 0.350 0.250 0.014 0.010 b1 0.250 0.150 0.010 0.006 c 0.200 0.100 0.008 0.004 D 1.750 1.500 0.069 0.059 E 0.900 0.700 0.035 0.028 E1 1.750 1.400 0.069 0.055 e 0.5TYP. 0.02TYP. e1 1.100 0.900 0.043 0.035 L 0.460 0.300 0.018 0.012 L1 0.460 0.260 0.018 0.010 θ 8° 0° 8° 0° SOT523 PACKAGE INFORMATION

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE