RM95N120T2 RECTRON | Alldatasheet
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Technical content
N-Channel Super Trench Power MOSFET
Description
The RM95N120T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features V DS =120V,ID =95A RDS(ON) =6 mΩ(typical) @ V GS=10V Excellent gate charge x R DS(on) product(FOM) Very low on-resistance RDS(on) Pb-free lead plating 100% UIS tested Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 95N120 RM95N120T2 TO-220-3L - - - Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 95 A Drain Current-Continuous(TC=100 ) ID (100 )6 0 A Pulsed Drain Current IDM 320 A Single pulse avalanche energy (Note 5) EAS 500 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 Halogen-free 2019-05/69 REV:O RM95N120T2 Schematic diagram TO-220-3L top view P/N suffix V means AEC-Q101 qualified, e.g:RM95N120T2V
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