RM8233D23 RECTRON | Alldatasheet
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REV:O Marking Information Product Name Marking RM8233D23 233 YWW 8233 YWWXXX YWW: Date Code Limiting V alues Symbol Parameter Conditions Min Max Unit V DS Drain-Source Voltage T A = 25 ℃ 20 - V V GS Gate-Source Voltage T A = 25 ℃ - ± 12 V I D * Drain Current T A = 25 ℃, V GS = 4.5 V - 15 A I DM ** Pulsed Drain Current T A = 25 ℃, V GS = 4.5 V - 30 A P tot Total Power Dissipation T A = 25 ℃ - 16 W T stg Storage Temperature - 55 150 T J Junction Temperature - 150 I S Diode Forward Current T A = 25 ℃ - 15 A R θJA Thermal Resistance- Junction to Ambient - 100 ℃ / W Notes： * Surface Mounted on 1 in pad area, t 10 sec ** Pulse width 300 s, duty cycle 2 % Surface-mounted package Advanced trench cell design Extremely low threshold voltage ESD:2KV Portable appliances Battery management Halogen-free BV ≧ 20 V Ptot ≦ 16 W I ≦ 15 A R ≦ 5.5 mΩ @ VGS = 4.5 V R ≦ 5.8 mΩ @ VGS = 3.9 V R ≦ 8.5 mΩ @ VGS = 2.5 V DS(ON) DS(ON) DS(ON) D
Electrical Characteristics
A = 25°C Unless Otherwise Noted) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, IDS = 250 μA 20 - - V VGS(th) Gate Threshold Voltage V DS = VGS, IDS = 250 μA 0.5 - 1.0 V I DSS Drain Leakage Current V DS = 16 V, V GS = 0 V - - 1 μA T J = 85 ℃ - - 30 μA I GSS Gate Leakage Current V GS = ± 10 V, V DS = 0 V - - ± 10 μA R DS(ON) a On-State Resistance V GS = 4.5 V, I DS = 7 A - 5.0 5.5 mΩ V GS = 3.9 V, I DS = 5 A - 5.2 5.8 V GS = 2.5 V, I DS = 4 A 7.8 8.5 Diode Characteristics V SD a Diode Forward Voltage I SD = 7 A, V GS = 0 V - - 1.2 V Dynamic Characteristics b C iss Input Capacitance V GS = 0 V, V DS = 10 V Frequency = 10 KHz - 938 - pF C oss Output Capacitance - 139 - C rss Reverse Transfer Capacitance - 122 - t d (on) Turn-on Delay Time V DS = 10 V, V GEN = 4.5 V, R G = 4.5 Ω, R L = 1.42 Ω, I DS = 7 A - 0.1 - uS t r Turn-on Rise Time - 0.3 - t d (off) Turn-off Delay Time - 3.4 - t f Turn-off Fall Time - 2.8 - Gate Charge Characteristics b Q g Total Gate Charge V GS = 4.5 V, V DS = 10 V, I DS = 7 A - 15 - nC Q gs Gate-Source Charge - 3 - Q gd Gate-Drain Charge - - Notes： a : Pulse test ; pulse width 300 s, duty cycle 2 % b : Guaranteed by design, not subject to production testing
Power Capability Current Capability P tot - Power (W) I D - Drain Current (A) T mp – Mounting Point Temp. (°C) T mp – Mounting Point Temp. (°C) Operating Transient Thermal Impedance I D - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0.01 0.1 1 10 100 0.01 0.1 100 300us 1ms Rds(on) Limit T C =25 o C 10ms 100ms DC 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 T C =25 o C,V G =10V 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 0.02 Mounted on 1in pad R JC o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 RATIN G AND CHARACTERISTI CS CURVES (RM8233D23)
I D - Drain Current (A) R DS(ON) - On Resistance (mΩ) V DS - Drain-Source Voltage (V) I D - Drain Current (A) R DS(ON) - On Resistance (mΩ) Normalized Threshold Voltage 0 5 10 15 20 25 30 35 40 45 50 V GS = 4.5V V GS =2.5V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 I DS =250 A 1.5V V GS 0 1 2 3 4 5 6 7 8 9 10 I DS =20A Output Characteristics On Resistance Transfer Characteristics Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature (°C) RATIN G AND CHARACTERISTI CS CURVES (RM8233D23)
I S - Source Current (A) C - Capacitance (pF) V GS - Gate-Source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 R ON j =25 o C: 4m V GS = 10V I DS = 20A 0 5 10 15 20 500 1000 1500 2000 2500 3000 3500 4000 4500 Frequency=1MHz Crss Coss Ciss 0.1 T j =25 o C T j =150 o C 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V DS =10V I DS = 20A Normalized On Resistance Diode Forward Current T j - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge V DS - Drain-Source Voltage (V) Q G - Gate Charge (nC) RATIN G AND CHARACTERISTI CS CURVES (RM8233D23)
- Package Dimensions DFN2×3-6L SYMBOLS DIMENSIONS IN MILLIMETERS MIN MAX A 1.95 2.05 B 2.95 3.25 C 1.45 1.55 D 1.65 1.75 E 0.33 0.43 F 0.25 0.35 G 0.20 0.30 H 0.35 0.45 I 0.20 BSC J 0.527 0.577 0-0.05 K 0.30× 45° BSC L 0.50 BSC M 0.70 0.80 N 0.10 0.20 SYMBOLS DIMENSIONS IN MILLIMETERS C 0.65 G 0.15 X 0.40 1.60 1.70 Y 0.53 1.94 3.30
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