RM7P40S8 RECTRON | Alldatasheet

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Technical content

P-Channel Enhancement Mode Power MOSFET

Description

The RM7P40S8 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =-40V,I D =-7A R DS(ON) <25mΩ @ V GS =-10V R DS(ON) <30mΩ @ V GS =-4.5V ƽ H igh density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Excellent package for good heat dissipation Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ DC-DC converter Schematic diagram SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 7P40 RM7P40S8 Absolute Maximum Ratings (T A =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -40 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D Drain Current-Continuous(T C =100ć)I D (100ć) Pulsed Drain Current I DM 40 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ć RM7P40S8 Halogen-free 2023-05/15 REV:D 12mmSOP-8 Ø330mm 2500units P/N suffix V means AEC-Q101 qualified, e.g:RM7P40S8V D D D D S S S G A -4.6 A

Thermal Resistance ,Junction-to-Ambient (Note 2) R /g537JA 50 /Wć Electrical Characteristics (T A =25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-40V,V GS =0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-5A - 16 25 m/g525 Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-5A - 21 30 m/g525 Forward Transconductance g FS V DS =-5V,I D =-5A 20 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1750 - PF Output Capacitance C oss - 215 - PF Reverse Transfer Capacitance C rss V DS =-20V,V GS =0V, F=1.0MHz - 180 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9 - nS Turn-on Rise Time t r - 8 - nS Turn-Off Delay Time t d(off) - 28 - nS Turn-Off Fall Time t f V DD =-20V, ,R L =2/g525 V GS =-10V,R GEN =3/g525 - 10 - nS Total Gate Charge Q g - 24 - nC Gate-Source Charge Q gs - 3.5 - nC Gate-Drain Charge Q gd V DS =-20V,I D =-5A, V GS =-10V - 6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-6A - - 1.2 V Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production -7 A- -

1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 /g537 0r 8 r 0 r 8 r

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