RM78N100LD RECTRON | Alldatasheet
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Technical content
N-Channel Super Trench Power MOSFET
Description
The RM78N100LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ƽ V DS =100V,ID =78A RDS(ON) =7.5mΩ(typical) @ VGS=10V RDS(ON) @ VGS=4.5V ƽ Excellent gate charge x R DS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested Application ƽ DC/DC Converter ƽ Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 78N100 RM78N100LD TO-252-2L - -- Absolute Maximum Ratings (TC=25ćunless otherwise noted) RM78N100LD ƽ Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM78N100LDV =10.5mΩ(typical) 2022 REV: B
1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit
RATING AND CHARACTERISTICS CURVES (RM78N100LD)
RATING AND CHARACTERISTICS CURVES (RM78N100LD)
RATING AND CHARACTERISTICS CURVES (RM78N100LD)
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.83 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.
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