RM6A2N250LD RECTRON | Alldatasheet

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ƽ New technology for high voltage device ƽ Low on-resistance and low conduction losses ƽ Small package ƽ Ultra Low Gate Charge cause ƽ 100% Avalanche Tested ƽ ROHS compliant Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ Halogen-free Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 250 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current TC=25oC ID 6.2 A TC=100oC3 . 9 A Pulsed Drain Current(1) IDM 25 A Power Dissipation TC=25oC PD 56 W Derate above 25 oC0 . 0 2 W / oC Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns Repetitive Pulse Avalanche Energy(4) EAR 0.4 mJ Avalanche current(1) IAR 5.6 A Single Pulse Avalanche Energy(4) EAS 115 mJ Junction and Storage Temperature Range T J, Tstg -55~150 oC RM6A2N250LD 2022-03/117 REV:O

Electrical Characteristics (TC=25ćunless otherwise noted) Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient(1) RθJA 110 oC/W Thermal Resistance, Junction-to-Case(1) RθJC 2.2 Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS ID = 250μA, VGS = 0V 250 - - V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current I DSS VDS = 250V, VGS = 0V - - 1 μA Gate Leakage Current I GSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance R DS(ON) VGS = 10V, ID = 3.1A - 0.43 0.55 Ω Forward Transconductance g fs VDS = 30V, ID = 3.1A - 3.0 - S Dynamic Characteristics Total Gate Charge Q g VDS = 200V, ID = 7A, VGS = 10V - 10.4 - nCGate-Source Charge Q gs -2 . 5- Gate-Drain Charge Q gd -4 . 7- Input Capacitance C iss VDS = 25V, VGS = 0V, f = 1.0MHz - 370 - pFReverse Transfer Capacitance C rss -7 . 5- Output Capacitance C oss - 77.5 - Turn-On Delay Time t d(on) VGS = 10V, VDS = 125V, ID = 7A, RG = 25Ω -1 2- ns Rise Time t r -4 3- Turn-Off Delay Time t d(off) -2 1- Fall Time t f -3 4- Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS -- 6 . 2 A Source-Drain Diode Forward Voltage V SD IS = 6.2A, VGS = 0V - - 1.4 V Body Diode Reverse Recovery Time t rr IF = 6.2A, dl/dt = 100A/μs(3) - 140 - ns Body Diode Reverse Recovery Charge Q rr -0 . 6 3- μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C. 3. ISD ≤6.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=4.8mH, IAS=6.2A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 ୔ Notes : 1. VGS = 0 V 2. ID = 250༟ BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ୔ Notes : 1. VGS = 10 V 2. ID = 3.1A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o 0 5 10 15 Notes 1. 250༕ Pulse Test 2. TC=25Ԩ Vgs=5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =8.5V =9.0V =9.5V =10V =15V =20V ID,Drain Current [A] VDS,Drain-Source Voltage [V] 4 8 12 16 0.0 0.5 1.0 1.5 VGS=20V VGS=10V RDS(ON) [Ω ] ID,Drain Current [A] 3456789 1 0 1 1 0.1 -55Ԩ 25Ԩ 150Ԩ * Notes ; 1. Vds=30V ID(A) VGS [V] 0.1 25Ԩ 150Ԩ ୔ Notes : 1. VGS = 0 V 2. 250༕ Pulse Test IDR Reverse Drain Current [A] VSD, Source-Drain Voltage [V] RATING AND CHARACTERISTICS CURVES (RM6A2N250LD)

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve 10 /g80s 100 /g80s 100 ms DC 10 ms 1 ms Operation in This Area is Limited by R DS(on) Single Pulse TJ=Max rated TC=25Ԩ ID, Drain Current [A] VDS, Drain-Source Voltage [V] ୔ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZθJ C * RθJ C(t) + TC RΘJ C=2.2Ԩ /W single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 ZθJ C(t), Thermal Response t1, Rectangular Pulse Duration [sec] 0123456789 1 0 1 1 1 2 50V 125V 200V ୔ Note : ID = 7A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] 1E-4 1E-3 0.01 0.1 1 10 500 1000 1500 2000 2500 3000 single Pulse RthJC = 2.2Ԩ /W TC = 25Ԩ Power (W) Pulse Width (s) Fig.11 Single Pulse Maximum Power Dissipation Fig.12 Maximum Drain Current vs. Case Temperature 25 50 75 100 125 150 ID, Drain Current [A] TC, Case Temperature [Ԩ ] 11 0 100 200 300 400 500 600 700 800 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ୔ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss Coss Ciss Capacitance [pF] VDS, Drain-Source Voltage [V] RATING AND CHARACTERISTICS CURVES (RM6A2N250LD)

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.

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