RM65N40D3 RECTRON | Alldatasheet
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Technical content
/g122 40V,65A R DS ON 5.9m¡˜V GS =10V R DS ON 10m¡˜V GS =4.5V /g122 Advanced Trench Technology /g122 Lead free product is acquired /g122 Excellent R DS ON and Low Gate Charge Application /g122 PWM applications /g122 Load Switch /g122 Power management Device Marking Device Device Package Reel Size Tape width Quantity (PCS) 65N40 RM65N40D3 PDFN3X3-8L 13 inch 5000 N-Channel Enhancement Mode Power MOSFET RM65N40D3 Schematic diagram /g122Halogen-free Package Marking and Ordering Information D D D 6 S S
2 S G
D Parameter Symbol Value Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS V Continuous Drain Current (T a =25 ćć I D A Continuous Drain Current (T a =100 ć I D A Pulsed Drain Currenr (1) I DM 260 A Singel Pulsed Avalanche Energy (2) E AS mJ Power Dissipation P D W Thermal Resistance from Junction to Ambient R θJA ć Junction Temperature T J 150 ć Storage Temperature T STG -55~ +150 ć Absolute Maximum Ratings (T C =25ćunless otherwise noted) 2022- Thermal Resistance from Junction to Case R θJC 1.42 ć REV:B (4) (4)
Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250μA V Zero gate voltage drain current I DSS V DS =40V, V GS = 0V μA Gate-body leakage current I GSS V GS ά 20V,V DS = 0V ±100 nA Gate threshold voltage (3) V GS(th) V DS GS , I D =250μA 1.5 2.5 V Drain -source on-resistance (3) R DS(on) V GS =10V, I D =30A mΩ V GS =4.5V, I D =20A Dynamic characteristics Input Capacitance C iss V DS =20V, V GS =0V, f =1MHz pF Output Capacitance C oss Reverse Transfer Capacitance C rss Switching characteristics Turn-on delay time t d(on) V DD =20V, I D =1A, R L =6Ω V GS =10V, R G =1Ω ns Turn-on rise time t r Turn-off delay time t d(off) Turn-off fall time t f Total Gate Charge Qg VDS= 20V, ID=10A, VGS= 10V nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Source-Drain Diode characteristics Diode Forward voltage (3) V DS V GS =0V, I S =1A V Diode Forward current (4) I S A Notes: 1. Repetitive Rating: pulse width limited by maximum junction temperature 2. EAS Condition:T J =25ć,V DD =20V,R G =25¡,L=0.5mH,I AS =18A 3. Pulse Test: pulse width≤300μs, duty cycle≤2% Electrical Characteristics (T C =25ćunless otherwise noted) Surface Mounted on FR4 Board By using 1Square inch Pad
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