RM60P60T2 RECTRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The RM60P60T2 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features V DS =-60V,I D =-61A R DS(ON) < 22mΩ @ V GS = -10V High density cell design for ultra low Rdson Fully ch aracterized avalanche voltage and current Special d esigned for convertors and power controls Good stability and uniformity with high E AS Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 60P60 -- Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -61 A Drain Current-Continuous(T C =100 D (100 ) -38.6 Pulsed Drain Current I DM -244 A Maximum Power Dissipation P D 171 W Peak diode recovery voltage dv/dt 15 V/ns Derating factor 1.37 W/ Single pulse avalanche energy (Note 5) E AS 245 mJ Operating Junction and Storage Temperature Range T J STG -55 To 150 RM60P60T2 TO-220 Halogen-free R DS(ON) < 40mΩ @ V GS = - 6V A RM60P60T2 Schematic dia g ram TO-220 D G S REV:C 2022-06/57
Thermal Resistance, Junction-to-Case (Note 2) R 0.73 /W Electrical Characteristics (T C =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-60V,V GS Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D Forward Transconductance g FS V DS =-10V,I D =-5A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =-25V,V GS =0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 23.1 Turn-on Rise Time t r - 76.2 Turn-Off Delay Time t d(off) - 113.5 Turn-Off Fall Time t f V DD =-48V, I =-5A D V GS =-10V,R G - 28.6 Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =-48,I D =-10A, V GS =-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A - -1.0 V Diode Forward Current (Note 2) I S - - -61 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. Guaranteed by design, not subject to production 5. E AS condition: Tj=25 DD =-20V,V G AS =45A -15 18 22 480 PF 150 PF 150 nS 220 nS 56 nS 46 nS 16 nC -100 V GS =-6V, I = D -8A 30 40 -1 -3 - 72 - 19 - 9.8 178 133 - PF 4854 6000 100 nC nC
D , tnerruC niarD suounitnoC( A ) Fig.1 Continuous Drain Current vs. T C roNe zilam d nOs iseRe cnat( m ? ) Fig.2 Normalized RDSON vs. T J roNe zilam d etaGh Th serd loV g atloe ( V ) Fig.3 Normalized V th vs. T J SG , etaG otu oSe crV g atloe ( V ) Fig.4 Gate Charge Waveform roNe zilam dhTm reR lao pses n( eR θCJ Fig.5 Normalized Transient Impedance D ,oCn itno usur D niau Cr rnet ( A ) Fig.6 Maximum Safe Operation Area T C , Case Temperature (濎) T J , Junction Temperature ( 濎 T J , Junction Temperature (濎) Qg , Gate Charge (nC) DS , Drain to Source V oltage (V) Square Wave Pulse Duration (s) RATIN G AND CHARACTERISTI CS CURVES (RM60P60T2 )
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF. 3.400 3.800 0.134 0.150
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE