RM60N100ADF RECTRON | Alldatasheet
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Description
The RM60N100ADF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features ƽ V DS =100V,I D =60A R DS(ON) <8.5mΩ @ V GS =10V ƽ Excellent gate charge x R DS(on) product(FOM) ƽ Very low on-resistance R DS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested Application ƽ DC/DC Converter ƽ Ideal for high-frequency switching and rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 60NA Absolute Maximum Ratings (T C =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous (Package Limited) I D 60 A Drain Current-Continuous(T C =100 )ć I D (100ć)5 2 A Pulsed Drain Current I DM 240 A Maximum Power Dissipation P D 105 W Derating factor 0.7 W/ ć Single pulse avalanche energy (Note 5) E AS 210 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ć P o w e r M O S F E T RM60N100ADF - - -DFN5X6-8L 201 REV: O Halogen-free synchronous RM60N100ADF
Thermal Resistance,Junction-to-Case (Note 2) R șJC 1.4 /Wć Electrical Characteristics (T C =25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250ȝA 100 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250ȝA 1.4 Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =30A - 8.5 m ȍ Forward Transconductance g FS V DS =10V,I D =30A 40 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 3500 - PF Output Capacitance C oss - 600 - PF Reverse Transfer Capacitance C rss V DS =50V,V GS =0V, F=1.0MHz - 29 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 12 - nS Turn-on Rise Time t r - 45 - nS Turn-Off Delay Time t d(off) - 31 - nS Turn-Off Fall Time t f V DD =50V,I D =30A V GS =10V,R G =4.7ȍ - 10 - nS Total Gate Charge Q g - 48 nC Gate-Source Charge Q gs - 15 nC Gate-Drain Charge Q gd V DS =50V,I D =30A, V GS =10V - 8 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =60A - 1.2 V Diode Forward Current (Note 2) I S - - 60 A Reverse Recovery Time t rr - 55 nS Reverse Recovery Charge Qrr T J = 25°C, I F = I S di/dt = 100A/ȝs (Note3) - 93 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300ȝs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25ć,V DD =50V,V G =10V,L=0.5mH,Rg=25ȍ 2.0 2.4 V
1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit
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