RM50N60TI RECTRON | Alldatasheet
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Technical content
P/N suffix V means AEC-Q101 qualified, e.g:RM50N604IV 2019-03/15 REV:O Schematic diagram TO-220F top view RM50N60TI Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity - - 50N60 RM50N60TI TO-220F - Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±20 Drain Current-Continuous I D 50 A Drain Current-Continuous(T C =100 ) I D (100 ) 35.4 A Pulsed Drain Current I DM Maximum Power Dissipation P D 85 W Single pulse avalanche energy (Note 5) E AS 245 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 Dearting factor 0.3 V A V60 RM50N60TI
Thermal Resistance,Junction-to-Case(Note 2) RșJC 3.3 /Wć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250ȝA 60 - - V Zero Gate Voltage Drain Current I DSS V DS=60V,VGS=0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250ȝA 1.4 1.9 2.5 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=20A - 14 20 m ȍ Forward Transconductance g FS V DS=5V,ID=20A 18 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2050 - PF Output Capacitance C oss - 158 - PF Reverse Transfer Capacitance C rss VDS=30V,VGS=0V, F=1.0MHz - 120 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.4 - nS Turn-on Rise Time t r - 5.1 - nS Turn-Off Delay Time t d(off) - 28.2 - nS Turn-Off Fall Time t f VDD=30V, RL=6.7ȍ VGS=10V,RG=3ȍ - 5.5 - nS Total Gate Charge Q g - 50 nC Gate-Source Charge Q gs - 6 nC Gate-Drain Charge Q gd VDS=30V,ID=20A, VGS=10V - 15 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=20A - 1.2 V Diode Forward Current (Note 2) I S - - 50 A Reverse Recovery Time trr - 28 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20A di/dt = 100A/ȝs(Note3) - 40 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300ȝs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,VDD=ć 30V,VG=10V,L=0.5mH,Rg=25ȍ
1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit
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