RM500N80TL RECTRON | Alldatasheet

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Features

Advanced trench cell design Super Trench MSL1 Tj max 175ഒഒ

Applications

High power inverter system E-Tool appliances BMS BV ฺ80 RDS(ON) ู 0.85 mΩ @ VGS = 10 V Ptot ู 450 W RDS(ON) ู 1.25 mΩ @ VGS = 6 V ID ู500 A 2023-04/113 REV:O G S S S S S S S D Top View TOLL-8L Symbol D S G Vˈ ˈ Halogen-free RM500N80TL Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantit y TBD - - 2000 TOLL-8L RM500N80TL Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TC = 25 ȭ 80 - V VGS Gate-Source Voltage TC = 25 ȭ - ± 20 V ID* Drain Current (DC) TC = 25 ȭ, VGS = 10 V - 500 A ID* Drain Current (DC) TC = 100 ȭ, VGS = 10 V - 355 A IDM*,** Drain Current (Pulsed) TC = 25 ȭ, VGS = 10 V - 1200 A Ptot* Drain Power Dissipation TC = 25 ȭ - 450 W Tstg Storage Temperature - 55 175 ȭ TJ Junction Temperature - 175 ȭ IS Diode Forward Current TC = 25 ȭ - 500 A EAS* Single Pulsed Avalanche Energy V DD= 50 V , L= 1.0 mH - 3042 mJ RθJA* Thermal Resistance-Junction to Ambient - 40 ȭ/W RθJC* Thermal Resistance-J unction to Case - 0.33 ȭ/W Notes: * Surface Mounted on 1 in2 pad area, t /g10010 sec Pulse width /g100300 /g80s, duty cycle /g1002 % * Limited by bonding wire Absolute Maximum Ratings (TA=25 unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, IDS = 250 μA 80 - - V VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 2 - 4 V IDSS Drain Leakage Current VDS = 64 V, VGS = 0 V - - 1 μA IGSS Gate Leakage Current VGS = ±20 V, VGS = 0 V, - - ±100 nA RDS(ON)a On-State Resistance VGS = 10 V, IDS = 50 A - 0.7 0.85 mΩ VGS = 6 V, IDS =30 A - 1.1 1.25 Diode Characteristics VSDa Diode Forward Voltage ISD = 50 A, VGS = 0 V - - 1.3 V trr Reverse Recovery Time IDS = 50 A, VGS = 0 V dlSD/dt = 100 A/μs - 137 - nS Qrr Reverse Recovery Charge - 369 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS = 0 V, VDS = 40 V Frequency = 1 MHz - 20427 - pFCoss Output Capacitance - 2566 - Crss Reverse Transfer Capacitance - 611 - td(on) Turn-on Delay Time VDS = 40 V, VGEN = 10 V, RG = 3.9 Ω, RL =0 . 8Ω, IDS = 50 A -4 7- nS tr Turn-on Rise Time - 122 - td(off) Turn-off Delay Time - 226 - tf Turn-off Fall Time - 126 - Gate Charge Characteristicsb Qg Total Gate Charge VDS = 40 V, VGS = 10 V, IDS = 50 A - 388 - nCQgs Gate-Source Charge - 100 - Qgd Gate-Drain Charge - 74 - Notes: a: Pulse test; pulse width /g100300 /g80s, duty cycle /g1002 % b: Guaranteed by design, not subject to production testing Electrical Characteristics (TA=25 unless otherwise noted)

Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Safe Operating Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 25 50 75 10 0 12 5 1 50 175 200 100 150 200 250 300 350 400 450 500 TC=25oC 0 25 50 75 10 0 12 5 1 50 175 200 100 150 200 250 300 350 400 450 500 550 600 TC=25oC,V G=10V 0.01 0.1 1 1 0 10 0 500 100 10 0 0 20 0 0 3 00u s 1ms Rds(on) Limi t TC=25oC 10ms DC 1 00u s 0.001 0.0 1 0.11E-4 1 0.1 0.01 0.02 Mo unt ed o n 1i n2 pa d R/g3JC : 0.33 oC/W 0.01 0.05 0. 1 0. 2 Single Pu l s e Duty = 0.5 RATING AND CHARACTERISTICS CURVES (RM500N80TL)

Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250/g80A 123456789 1 0 IDS=50A 01 0 2 0 3 0 4 0 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS= 6V VGS=10V VGS= 5,6,7,8,9,10V RATING AND CHARACTERISTICS CURVES (RM500N80TL)

Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 1 02 03 04 05 06 0 5000 10000 15000 20000 25000 30000 35000 40000 45000 Frequency=1MHz Crss Coss Ciss 0 50 100 150 200 250 300 350 VDS= 40V ID = 50A -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 RON@Tj=25 o C: 0.7m/g58 VGS = 10V IDS = 50A Tj=25 o C Tj=175 o C RATING AND CHARACTERISTICS CURVES (RM500N80TL)

Symbol Dimensions In Millimeters MIN. MAX. A 2.20 2.40 b 0.70 0.90 b1 9.70 9.90 b2 0.42 0.50 c 0.40 0.60 D 10.28 10.58 D2 3.10 3.50 E 9.70 10.10 E1 7.90 8.30 e 1.20BSC H 11.48 11.88 H1 6.75 7.15 N 8.00 J 3.00 3.30 K1 3.98 4.38 L 1.40 1.80 L1 0.60 0.80 L2 0.50 0.70 L4 1.00 1.30 θ 4° 10°

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