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P-Channel Enhancement Mode Power MOSFET

Description

The RM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ƽ V DS = -30V,ID = -5.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface Mount Package Application ƽ PWM applications ƽ Load switch ƽ Power management D1 D2 S1 S2 Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

4953 RM4953 SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (TA=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -5.1 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 /W ć Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current I DSS VDS=-24V,VGS=0V - - -1 μA 2016-12 REV:O15 RM4953

Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250/g541A -1 -1.6 -3 V VGS=-10V, ID=-5.1A - 43 55 m/g525 Drain-Source On-State Resistance R DS(ON) VGS=-4.5V, ID=-4.2A - 62 90 m/g525 Forward Transconductance g FS V DS=-15V,ID=-4.5A 4 7 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 520 - PF Output Capacitance C oss - 130 - PF Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - 70 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 14 - nS Turn-Off Fall Time t f VDD=-15V, ID=-1A, VGS=-10V,RGEN=6/g525 - 9 - nS Total Gate Charge Q g - 11 - nC Gate-Source Charge Q gs - 2.2 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-5.1A,VGS=-10V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-5.1A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 /g537 0r 8 r 0 r 8 r

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE