RM48N100D3 RECTRON | Alldatasheet

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N-Channel Super Trench Power MOSFET

Description

The RM48N100D3 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features V DS =100V,ID =48A RDS(ON) <13.6mΩ @ VGS=10V Excellent gate charge x R DS(on) product Very low on-resistance RDS(on) Pb-free lead plating 100% UIS tested Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 48N100 Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS V Drain Current-Continuous (Silicon Limited) ID 48 A Drain Current-Continuous(TC=100 )I D (100 )3 0 A Pulsed Drain Current IDM 192 A Maximum Power Dissipation PD 61 W Derating factor 0.49 W/ Single pulse avalanche energy (Note 5) EAS 115 mJ Operating Junction and Storage Temperature Range TJ,TSTG -50 To 150 2018-12/57 REV:O Halogen-free 20/-12 RM48N100D3 RM48N100D3 DFN 3X3 - - - Schematic diagram pin assignment DFN 3x3 EP top view RDS(ON) <22mΩ @ VGS=4.5V P/N suffix V means AEC-Q101 qualified, e.g:RM48N100D3V

Thermal Resistance,Junction-to-Case(Note 2) R JC 2.04 /W Electrical Characteristics (TC=25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250 A 100 - V Zero Gate Voltage Drain Current I DSS V DS=100V,VGS=0V - - 1 A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250 A Drain-Source On-State Resistance R DS(ON) V GS=10V, ID =20A - 11.3 13.6 Forward Transconductance g FS V DS=10V,ID=3A Dynamic Characteristics (Note4) Input Capacitance C lss - 1640 Output Capacitance C oss - 240 Reverse Transfer Capacitance C rss VDS=50V,VGS=0V, F=1.0MHz - 4 Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 14.2 Turn-on Rise Time t r - 20.8 Turn-Off Delay Time t d(off) - 42 Turn-Off Fall Time t f VDD=50V,ID=1A VGS=10V,RG=6 - 30 Total Gate Charge Q g - 27.8 Gate-Source Charge Q gs - Gate-Drain Charge Q gd VDS=50V,ID=10A, VGS=10V - 8.8 Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=1A - 1.0 V Diode Forward Current (Note 2) I S - - 48 A Reverse Recovery Time trr - 43.5 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A/ s(Note3) - 59.6 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V DD=50V,VG=10V,L=0.5mH,Rg=25 3.5 1 1.5 2.5 V V GS=4.5V, ID =15A - 16.7 22 m m - 8 - S 3280 480 PF 10 PF PF 28 nS 42 nS 84 nS 60 nS 55 nC 7 nC 17 nC

ID , u nitnoC tnerruC niarD suo( A ) Fig.1 Continuous Drain Current vs. T C TJ , Junction Temperature (濎) Fig.2 Normalized RDSON vs. T J ecnatsiseR nO dezilamroN (m? ) TJ , Junction Temperature (濎) Fig.3 Normalized Vth vs. T J dezilamroN etaGe gatloV dlohserhT ( V ) Fig.4 Gate Charge Characteristics V SG , egatloV ecruoS ot etaG( V ) Qg , Gate Charge (nC) TC , Case Temperature (濎) ID tnerruC niarD ,( A ) VDS ,Drain to Source V oltage (9) RD )NO(S , nruT- ecnatsiseR nO( m hom) ID , Drain Current (A) Fig.5 Typical Output Characteristics Fig.6 Turn-On Resistance vs. I D RATING AND CHARACTERISTICS CURVES (RM48N100D3 )

Fig.8 Normalized Transient Impedance Fig.9 Maximum Safe Operation Area dezilamroNR ( esnopseR lamrehT θCJ ) Square Wave Pulse Duration (s) ID tnerruC niarD ,( A ) VDS , Drain to Source V oltage (V) ecnaticapaC ( F p) VDS , Drain to Source V oltage (9) Fig.7 Capacitance Characteristics RATING AND CHARACTERISTICS CURVES (RM48N100D3 ) Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

(pcs/tube) Tube (pcs/inner box) Tube (pcs/cartoon) Tape&Reel (pcs/reel) Tape&Reel (pcs/inner box) Tape&Reel (pcs/cartoon) DFN5x6/ 100 10,000 100,000 2,500 5,000 40,000 DFN1006 —— —— —— 10,000 10,000 400,000 SOP-8 100 10,000 100,000 4,000 4,000 64,000 TSSOP-8 100 32,000 128,000 3,000 6,000 48,000 TO-252-2L(4R) 80 4,000 40,000 2,500 2,500 25,000 TO-263-2L 50 1,000 10,000 800 800 8,000 T O - 9 2 — —— —— — 1 , 0 0 0 ( 㺻㻵) 10,000 100,000 DFN3x3

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