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N and P-Channel Enhancement Mode Power MOSFET

Description

The RM4606S8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ƽ N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mȍ @ VGS=10V ƽ P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mȍ @ VGS=-10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

4606 RM4606S8 SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (TA=25ććunless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V TA=25ć 6.5 -7 Continuous Drain Current TA=70ć ID 5.4 -5.8 A Pulsed Drain Current (Note 1) IDM 30 -30 A Maximum Power Dissipation TA=25ć PD 2.0 2.0 W Operating Junction and Storage Temperature Range T J,TSTG -55 To 150 -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RșJA N-Ch 62.5 /W ć Thermal Resistance,Junction-to-Ambient (Note2) RșJA P-Ch 62.5 /W ć N-channel P-channel RM4606S8 2017-01 REV:O15

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250ȝA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS=30V,VGS=0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250ȝA 1 1.6 3 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=6A - 20 30 m ȍ Forward Transconductance g FS V DS=5V,ID=6A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 255 - PF Output Capacitance C oss - 45 - PF Reverse Transfer Capacitance C rss VDS=15V,VGS=0V, F=1.0MHz - 35 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 4.5 - nS Turn-on Rise Time t r - 2.5 - nS Turn-Off Delay Time t d(off) - 14.5 - nS Turn-Off Fall Time t f VDD=15V, RL=2.5ȍ VGS=10V,RGEN=3ȍ - 3.5 - nS Total Gate Charge Q g - 13 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd VDS=15V,ID=6A, VGS=10V - 3.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=6A - 0.8 1.2 V

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250ȝA -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS=-30V,VGS=0V - - -1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250ȝA -1.5 -1.9 -2.5 V Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-6.5A - 28 33 m ȍ Forward Transconductance g FS V DS=-5V,ID=-6.5A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 520 - PF Output Capacitance C oss - 100 - PF Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - 65 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.5 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 19 - nS Turn-Off Fall Time t f VDD=-15V, RL=2.3ȍ VGS=-10V,RGEN=6ȍ - 7 - nS Total Gate Charge Q g - 9.2 - nC Gate-Source Charge Q gs - 1.6 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-6.5A VGS=-10V - 2.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-6.5A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ” 10 sec. 3. Pulse Test: Pulse Width ” 300ȝs, Duty Cycle ” 2. % 4. Guaranteed by design, not subject to production

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 ș 0r 8 r 0 r 8 r

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE