RM45N60DF RECTRON | Alldatasheet

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Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The RM45N60DF uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS = 60V,I D =45A R DS(ON) < 13mΩ @ V GS =10V (Typ:10m Ω) R DS(ON) < 17mΩ @ V GS =4.5V (Typ:13m Ω) ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Low gate to drain charge to reduce switching losses Application ƽ Power switching application ƽ Load switch Schematic diagram DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Pack age Reel Size Tape width Quantity 45N60 RM45N60DF DFN5X6-8L Ø330mm 12mm 5000 Absolute Maximum Ratings (T C =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 45 A Drain Current-Continuous(T C =100ć) I D (100ć) 32 A Pulsed Drain Current I DM 140 A Maximum Power Dissipation P D 60 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ć Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 2.5 /W ć Electrical Characteristics (T C =25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 - V RM45N60DF 2018-06/15 REV:A Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM45N60DFV

Zero Gate Voltage Drain Current I DSS V DS=60V,VGS=0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250ȝA 1.2 1.8 2.2 V VGS=10V, ID=20A - 10 13 m ȍ Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=20A - 13 17 m ȍ Forward Transconductance g FS V DS=5V,ID=9A 25 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2180 - PF Output Capacitance C oss - 350 - PF Reverse Transfer Capacitance C rss VDS=30V,VGS=0V, F=1.0MHz - 270 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8.5 - nS Turn-on Rise Time t r - 6 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f VDD=30V, RL=1ȍ VGS=10V,RGEN=3ȍ - 5 - nS Total Gate Charge Q g - 58 - nC Gate-Source Charge Q gs - 8 - nC Gate-Drain Charge Q gd VDS=30V,ID=20A, VGS=10V - 17 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=20A - - 1.2 V Diode Forward Current (Note 2) I S - - 45 A Reverse Recovery Time trr - 30 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF=20A di/dt = 100A/ȝs(Note3) - 44 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ” 10 sec. 3. Pulse Test: Pulse Width ” 300ȝs, Duty Cycle ” 2%. 4. Guaranteed by design, not subject to production

1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit

Part No. Week – code (WW:01~52) 1 7 X X Year – Code (Y:17-----2017

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 K 1.190 1.390 0.047 0.055 b 0.035 0.450 0.014 0.018 e 1.270(TYP.) 0.050(TYP.) L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 ș 8r 12 r 8 r 12 r

(pcs/tube) Tube (pcs/inner box) Tube (pcs/cartoon) Tape&Reel (pcs/reel) Tape&Reel (pcs/inner box) Tape&Reel (pcs/cartoon) DFN 100 10,000 100,000 2,500 5,000 40,000 SOP-8 100 10,000 100,000 4,000 4,000 20,000 TSSOP-8 100 32,000 128,000 3,000 6,000 48,000 TO-252-2L(4R) 80 4,000 40,000 2,500 2,500 25,000 TO-263-2L 50 1,000 10,000 800 800 8,000

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE