RM4503S

RM4503S RECTRON | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM4503S uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. General Features ƽ N-Channel V DS = 30V,I D =10A R DS(ON) < 18mȍ @ V GS =4.5V R DS(ON) < 12mȍ @ V GS =10V ƽ P-Channel V DS = -30V,I D = -9.1A R DS(ON) < 35mȍ @ V GS =-4.5V R DS(ON) < 20mȍ @ V GS =-10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Application ƽ Battery protection ƽ Load switch ƽ Power management Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (T A =25ććunless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25ć 10 -9.1 Continuous Drain Current T A =70ć I D 7.9 -7.2 A Pulsed Drain Current (Note 1) I DM 30 -30 A Maximum Power Dissipation T A =25ć P D 2.5 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ć N-channel P-channel RM4503S Halogen-free 2022-01/15 REV:C RM4503S 12mmSOP-8 Ø330mm -4503

Thermal Resistance,Junction-to-Ambient (Note2) R șJA P-Ch 50 /Wć A =25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250ȝA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250ȝA 1 1.6 3 V V GS =10V, I D =9A ȍ Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5A ȍ Forward Transconductance g FS V DS =5V,I D =10A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1550 - PF Output Capacitance C oss - 300 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 180 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 30 - nS Turn-on Rise Time t r - 20 - nS Turn-Off Delay Time t d(off) - 100 - nS Turn-Off Fall Time t f V DD =25V,I D =1A V GS =10V,R GEN =6ȍ - 80 - nS Total Gate Charge Q g - 13 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =10A, V GS =4.5V - 3.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =6A - 0.8 1.2 V 9 12 m m 12 18

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250ȝA -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS=-30V,VGS=0V - - -1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250ȝA -1 -1.5 -3 V VGS=-10V, ID=-9.1A - 15 20 m ȍ Drain-Source On-State Resistance R DS(ON) VGS=-4.5V, ID=-5A - 21 35 m ȍ Forward Transconductance g FS V DS=-15V,ID=-9.1A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1600 - PF Output Capacitance C oss - 350 - PF Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - 300 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 15 - nS Turn-Off Delay Time t d(off) - 110 - nS Turn-Off Fall Time t f VDD=-15V, ID=-1A, VGS=-10V,RGEN=6ȍ - 70 - nS Total Gate Charge Q g - 30 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-9.1A VGS=-10V - 8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-6A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ” 10 sec. 3. Pulse Test: Pulse Width ” 300ȝs, Duty Cycle ” 2. % 4. Guaranteed by design, not subject to production

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 ș 0r 8 r 0 r 8 r

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