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Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The RM4435 use s advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. (ON) (ON) (ON) ƽ ƽ ƽ ƽ ƽ General Features ƽ V S = -30V,I = -9.1A DD RDS < 35mΩ @ VGS=-4.5V RDS < 20mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application ƽ Battery Switch Load switch Power management D G S Schematic diagram Markin ment g and pin assign SOP-8 top view ackage Marking and Ordering Information e Reel Size Tape width Quantity P Device Marking Device Device Packag
4435 RM4435 SOP-8 Ø330mm 12mm 2500 units
bsolute Maximum Ratings (TA=25ćunless otherwise noted) bol Limit Unit A Parameter Sym Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TC =25ć -11 TC =70ć TA =25ć -9.1 Continuous Drain Current (TJ =150ć) ID A TA =70ć -7.2 Drain Current-Pulsed (Note 1) IDM A -50 Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range T G -55 50 J,TST To 1 ć Thermal Characteristic -Ambient (Note 2) RθJA /Wć Thermal Resistance,Junction-to Electrical Characteristics (TA=25ćunless otherwise noted) RM4435 2016-09 REV:O15
Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250μA -1 -1.5 -3 V VGS=-10V, ID=-9.1A - 16 20 mΩ Drain-Source On-State Resistance R DS(ON) VGS=-4.5V, ID=-6.9A - 21 35 mΩ Forward Transconductance g FS 1 VDS=-15V,ID=-9.1A 0 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1600 - PF Output Capacitance C oss - 350 - PF Reverse Transfer Capacitance VDS=-15V,VGS=0V, Crss F=1.0MHz - 300 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 15 - nS Turn-Off Delay Time t d - (off) 110 - nS Turn-Off Fall Time t f VDD=-15V, ID=-1A, VGS=-10V,RGEN=6Ω 70 - nS Total Gate Charge Q g - 30 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-9.1A VGS=-10V - 8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-2.1A - - -1.2 V Notes: Rating: Pulse width limited by maximum junction temperature. 1. Repetitive 2. Surface Mounted on FR4 Board, t ≤ 10 sec. ≤ 2%. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle 4. Guaranteed by design, not subject to production
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0 8 0 8
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