RM42P30DN RECTRON | Alldatasheet

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P-Channel Enhancement Mode Power MOSFET

Description

The RM42P30DN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features V DS =-30V,ID =-42A RDS(ON) < 14mΩ @ VGS=-10V RDS(ON) < 22mΩ @ VGS=-4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Special process technology for high ESD capability Application Secondary side synchronous rectifier High side switch in POL DC/DC converter 100% UIS TESTED! Schematic diagram Marking and pin assignment DFN 3x3 EP top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity B3105 RM42P30DN DFN 3x3 EP - - - Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -42 A Pulsed Drain Current IDM -130 A Maximum Power Dissipation PD 37 W Derating factor 0.28 W/ Single pulse avalanche energy (Note 5) EAS 125 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 2018-08/83 REV:O RM42P30DN Halogen-free

Thermal Resistance,Junction-to-Case(Note 2) R JC 3.36 /W Electrical Characteristics (TC=25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250 A -30 - - V Zero Gate Voltage Drain Current I DSS V DS=-24V,VGS=0V - - -1 A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250 A VGS=-10V, ID=-30A - - Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=-15A - - m Forward Transconductance g FS V DS=-5V,I D=-30A - 30 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2215 - PF Output Capacitance C oss - 310 - PF Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - 237 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - Turn-on Rise Time t r - 73.7 - nS Turn-Off Delay Time t d(off) - 61.8 - nS Turn-Off Fall Time t f VDD=-15V,ID=-15A VGS=-10V,RGEN=3.3 - 24.4 - nS Total Gate Charge Q g - 22 - nC Gate-Source Charge Q gs - 8.7 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-15A, VGS=-4.5V - 7.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-1A - Diode Forward Current (Note 2) I S - - -42 A Reverse Recovery Time trr - 19 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = -15A di/dt = 100A/ s(Note3) - 9 Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition Tj=25 ,VDD=15V,VG=10V,L=0.1mH,Rg=25 V -1.2 - -2.5 -1 V - V =V =0V,Force currentG D - nC nS

0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) I- D )A( tnerruC niarD VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V -VSD , Source-to-Drain Voltage (V) I- S )A(tnerruC ecruoS TJ=150ć TJ=25ć 0 9 18 27 36 45 QG , Total Gate Charge (nC) V- SG )V( egatloV ecruoS ot etaG VDS=-15V ID=-15A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (ć ) V dezilamroN )ht(SG 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (ć) ecnatsiseR nO dezilamroN Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ RATING AND CHARACTERISTICS CURVES (RM42P30DN)

-VDS , Drain to Source Voltage (V) )Fp( ecnaticapaC F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 -VDS (V) I- D )A( 10us 100us 10ms 100ms DC TC=25ଇ Single Pulse 1ms 0.001 0.01 0.1 t , Pulse Width (s) R( esnopseR lamrehT dezilamroN CJθ ) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform RATING AND CHARACTERISTICS CURVES (RM42P30DN)

B 3 1 0 5 Part No. Code Week Code (WW:01~52) Y W W X X X Year Code Serial No. Packing Code

(pcs/tube) Tube (pcs/inner box) Tube (pcs/cartoon) Tape&Reel (pcs/reel) Tape&Reel (pcs/inner box) Tape&Reel (pcs/cartoon) DFN5x6/ 100 10,000 100,000 2,500 5,000 40,000 DFN1006 —— —— —— 10,000 10,000 400,000 SOP-8 100 10,000 100,000 4,000 4,000 20,000 TSSOP-8 100 32,000 128,000 3,000 6,000 48,000 TO-252-2L(4R) 80 4,000 40, 000 2,500 2,500 25,000 TO-263-2L 50 1,000 10,000 800 800 8,000 DFN3x3

RReevviissee HHiissttoorryy CCoonntteenntt New Release

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE