RM42N200DF RECTRON | Alldatasheet

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N-Channel Enhancement Mode

Description

ƽ V DS =200V,ID =42A RDS(ON) <32mΩ @ VGS=10V ƽ Excellent gate charge x R DS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ Pb-free lead plating ƽ 100% UIS tested Application ƽ DC/DC Converter ƽ Ideal for high-frequency switching and rectification 100% UIS TESTED! 100% /g168Vds TESTED! Schematic diagram Marking and pin assignment DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 42N200 Absolute Maximum Ratings (TC=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (Package Limited) ID 42 A Pulsed Drain Current IDM 140 A Maximum Power Dissipation PD 150 W Single pulse avalanche energy (L=0.4mH) E AS 180 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ć P o w e r M O S F E T RM42N200DF - - -DFN5X6-8L Halogen-free synchronous REV:O The RM42N200DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 26 A (Tc=25 )ć (Tc=100 )ćDrain Current-Continuous (Package Limited) 2020-05/X RM42N200DF

Thermal Resistance,Junction-to-Ambient(Note 2) R/g537JA 50 /Wć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID =250A 200 - V Zero Gate Voltage Drain Current I DSS V DS=200V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541 Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=10A Forward Transconductance g FS V DS=5V,ID=10A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=100V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=100V,ID=10A VGS=10V,RG=10 Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V DS V GS=0V,IF=10A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 2.0 3.0 4.0 V 12- nS A - 28 32 m - 31 - S 1598- - PF 124- - PF 7.5- - PF 17- nS 23- nS 10- nS 19- nC 7- - nC 2- - nC - 0.9 1.2 V Ω Ω VDD=100V,ID=10A

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)LJXUH7\\SLFDO*DWH&KDUJHYV*DWHWR6RXUFH9ROWDJH )LJXUH 7\\SLFDO&DSDFLWDQFHYV'UDLQWR6RXUFH9ROWDJH )LJXUH 0D[LPXP6DIH2SHUDWLQJ$UHD )LJXUH0D[LPXQ'UDLQ&XUUHQWYV&DVH7HPSHUDWXUH )LJXUH1RUPDOL]HG0D[LPXP7UDQVLHQW7KHUPDO,PSHGDQFH-XQFWLRQWR&DVH 0 5 10 15 20 VGS (V) Qg (nC) VDS=100V ID=10A 100 1000 10000 100000 0 2 04 06 08 0 1 0 0 Capacitance (pF) VDS (V) Ciss Crss Coss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 ID (A) VDS (V) 10/g80s 10ms 1ms DC RDS(ON) limited TJ(Max)=150eC TC=25eC 100/g80s 0 25 50 75 100 125 150 Current rating ID(A) TCASE (ഒ) 0.01 0.1 1E-05 0.0001 0.001 0.01 0.1 1 10 Z/g84JC Normalized Transient Thermal Resistance Pulse Width (s) Duty=Ton/T Peak TJ=TC+PDM.Z/g84JC.R/g84JC R/g84JC=3.1ഒ/W Duty=0.5 0.3 0.1 0.05 0.03 0.01 single pulse RATING AND CHARACTERISTICS CURVES (RM42N200DF)

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