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P-Channel Enhancement Mode Power MOSFET

Description

The RM40P40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .Th is device is well suited for high current load applications. General Features ƽ V DS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and u niformity with high EAS ƽ Excellent package for good heat dissipation Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 40P40 RM40P40LD TO-252-2L - -- Absolute Maximum Ratings (TC=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -40 A Drain Current-Continuous(TC=100ć)I D (100ć) -25 A Pulsed Drain Current IDM -50 A Maximum Power Dissipation PD 80 W Derating factor 0.53 W/ ć Single pulse avalanche energy (Note 5) EAS 544 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ć RM40P40LD 2016-12 REV:O15

Thermal Resistance,Junction-to-Case(Note 2) R/g537JC 1.88 /Wć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250/g541A -40 - - V Zero Gate Voltage Drain Current I DSS V DS=-40V,VGS=0V - - -1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250/g541A -1.5 -1.9 -3.0 V Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-12A - 12 14 m/g525 Forward Transconductance g FS V DS=-5V,ID=-12A 34 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2960 - PF Output Capacitance C oss - 370 - PF Reverse Transfer Capacitance C rss VDS=-20V,VGS=0V, F=1.0MHz - 310 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 18 - nS Turn-Off Delay Time t d(off) - 38 - nS Turn-Off Fall Time t f VDD=-20V,ID=-20A VGS=-10V,RG=3/g525 - 24 - nS Total Gate Charge Q g - 72 nC Gate-Source Charge Q gs - 14 nC Gate-Drain Charge Q gd VDS=-20,ID=-12A, VGS=-10V - 15 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-20A - -1.2 V Diode Forward Current (Note 2) I S - - -40 A Reverse Recovery Time trr - 40 nS Reverse Recovery Charge Qrr TJ = 25°C, IF =- 20A di/dt = -100A//g541s(Note3) - 42 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25ć,VDD=-20V,VG=-10V,L=1mH,Rg=25/g525,IAS=33A

1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g23.83/g19 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE