RM400N40TL RECTRON | Alldatasheet
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Technical content
N-Channel Enhancement Mode Power MOSFET
Description
design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features V DS D RDS(ON) < 0.5mΩ @ VGS=10V RDS(ON) GS =6V Surface-mounted package Super Trench Advanced trench cell design Application Power Tool appliances High power inverter system Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25 unless otherwise noted) Halogen-free Schematic diagram TOLL top view L uses advanced trench technology and /g22 /g51 /g57 /g6 /g6/g6 /g6 /g6 BMS appliances TOLL-8L400N40 Pin Description Drain(D) Source(S) Gate(G)1 2,3,4,5,6,7,8 13 inch 2000pcs 14000pcs RM400N40TL The RM400N40T < 0.7mΩ @ V =400A = 40V,I RM400N40TL Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TC=25ȭ -4 0 V VGS Gate-Source Voltage TC=25ȭ -± 2 0 V ID *, *** Drain Current TC=25ȭ,V GS=10 V - 400 A TC=100ȭ,V GS=10 V - 379 A IDM * Pulsed Drain Current TC=25ȭ,V GS=10 V - 1600 A Ptot Drain power dissipation TC=25ȭ - 300 W Tstg Storage Temperature -55 175 ȭ TJ Junction Temperature - 175 ȭ IS Continuous-Source Current TC=25ȭ - 400 A EAS Single Pulsed Avalanche Energy V DD=40 V, L=1.0 mH - 1984 mJ RθJA Thermal Resistance-Junction to Ambient - 47 ȭ/W RθJC Thermal Resistance-Junction to Case - 0.5 2023-06/59 REV:O Notes: * Pulse width /g100300 /g80s, duty cycle /g1002% Surface Mounted on 1 in2 pad area, t /g10010 sec * Limited by bonding wire
Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0 V, IDS=250 μA 40 V VGS(th) Gate Threshold Voltage V DS=VGS, IDS=250 μA 1.5 - 3.5 V IDSS Drain Leakage Current V DS=32 V, VGS=0 V - - 1 μA IGSS Gate Leakage Current V GS=±20 V, VDS=0 V - - ±100 nA RDS(ON) a On-State Resistance VGS=10 V, IDS=50 A - 0.45 0.50 mΩ VGS=6 V, IDS=30 A - 0.60 0.70 Diode Characteristics VSD a Diode Forward Voltage I SD=50 A, VGS=0 V - - 1.3 V trr Reverse Recovery Time ISD=50 A, VGS=0 V, dlSD/dt=100 A/μs -5 9-n s Qrr Reverse Recovery Charge - 70 - nC Dynamic Characteristics b Ciss Input Capacitance VGS=0 V, VDS=20 V Frequency=1 MHz -1 0 5 0 5- pFCoss Output Capacitance - 3829 - Crss Reverse Transfer Capacitance - 80 - td(on) Turn-on Delay Time VDS=20 V, VGEN=10 V, RG=3.9 Ω, RL=0.4 Ω, IDS=50 A -2 1- ns tr Turn-on Rise Time - 113 - td(off) Turn-off Delay Time - 171 - tf Turn-off Fall Time - 134 - Gate Charge Characteristics b Qg Total Gate Charge VDS=20 V, VGS=10 V, IDS=50 A - 191 - nC Qgs Gate-Source Charge - 44 - Qgd Gate-Drain Charge - 37 - Notes: a. Pulse test; pulse width /g100300 /g80s, duty cycle /g1002% b. Guaranteed by design, not subject to production testing
/g28 /g28 Power Capability Current Capability Ptot - Power (W) 0 25 50 75 100 125 150 175 200 100 150 200 250 300 350 TC=25oC ID - Drain Current (A) 0 25 50 75 100 125 150 175 200 100 150 200 250 300 350 400 450 TC=25oC , VGS= 10V Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operating Area Transient Thermal Impedance ID - Drain Current (A) 0.01 0.1 1 10 100 300 0.1 100 1000 0.01 3000 1ms Rds(on) Limit TC=25oC DC 300us 100us 10ms Normalized Effective Transient 0.001 0.01 0.11E-4 1 0.1 0.01 Mounted on 1in2 pad R/g84JC : 0.5 oC/W 0.01 0.02 0.05 0.1 0.2 Duty = 0.5 Single Pulse VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) RATING AND CHARACTERISTICS CURVES (RM400N40TL)
/g28 /g28 RATING AND CHARACTERISTICS CURVES (RM400N40TL) Output Characteristics On Resistance ID - Drain Current (A) 100 200 300 400 500 600 700 VGS= 5,6,7,8,9,10V RDS(ON) - On Resistance (mΩ) 0 100 200 300 400 500 600 700 0.0 0.2 0.4 0.6 0.8 1.0 VGS= 6V VGS= 10V VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS = 250/g80A VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) 0123456789 1 0
/g28 Normalized On Resistance Diode Forward Current Normalized On Resistance -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 RON@Tj=25oC: 0.48m/g58 VGS = 10V IDS = 50A IS - Source Current (A) 100 700 Tj=175oC Tj=25oC Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) 0 1 02 03 04 0 2000 4000 6000 8000 10000 12000 14000 16000 Frequency=1MHz Crss Coss Ciss VGS - Gate-Source Voltage (V) 0 40 80 120 160 200 VDS= 20V IDS= 50A VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) RATING AND CHARACTERISTICS CURVES (RM400N40TL)
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