RM3N60EA

RM3N60EA RECTRON | Alldatasheet

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Low power DC to DC Converter BV ʁʁ 60 V Ptot ʆ 1.4 W ID ʆ 3.2 A RDS(ON) ʀ 85 mΩ @ VGS=10 V RDS(ON) ʀ 96 mΩ @ VGS= 4.5 V Symbol S G D D G S Top View SOT23-3L Surface-mounted package ESD Advanced trench cell design Halogen-free RM3N60EA N -Channel Enhancement Mode Power MOSFET Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity RM3N60EA6003 3000-- Absolute Maximum Ratings (TA=25 unless otherwise noted) SOT23-3L Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TA =2 5 ȭ 60 - V VGS Gate-Source Voltage TA =2 5 ȭ -± 2 0V ID* Drain Current ( DC ) TA =2 5 ȭ, VGS = 10 V - 3.2 A TA = 100 ȭ, VGS = 10 V -2 A IDM*,** Drain Current ( Pulsed ) TA =2 5 ȭ,V GS = 10 V - 12.8 A Ptot* Total Power Dissipation TA =2 5 ȭ - 1.4 W Tstg Storage Temperature - 55 150 ȭ TJ Junction Temperature - 55 150 ȭ IS Diode Forward Current TA =2 5 ȭ - 3.2 A RθJA* Thermal Resistance- Junction to Ambient - 90 ȭ /W Notes烉* Surface Mounted on 1 in2 pad area, t /g10010 sec Pulse width /g100300 /g80s, duty cycle /g1002 % * Limited by bonding wire 2022-12/113 REV:O

Drain-Source Breakdown Voltage VGS IDS 250 μA V VGS(th) Gate Threshold Voltage VDS VGS, IDS 250 μA V IDSS Drain Leakage Current VDS VGS V μA IGSS Gate Leakage Current VGS VDS V μA RDS(ON)a On-State Resistance VGS 10 V, IDS A VGS

4.5 V, IDS

A Diode Characteristics VSDa Diode Forward Voltage ISD A, VGS V 1.3 V trr Reverse Recovery Time ISD 2 A, dlSD dt 100 A μs 8.2 nS Qrr Reverse Recovery Charge 3.9 nC Dynamic Characteristicsb Ciss Input Capacitance VGS V, VDS 30 V Frequency MHz 321 pF Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VDS 30 V, VGEN 10 V, RG 3.9 Ω, RL 15 Ω, IDS 2 A 3.4 nS tr Turn-on Rise Time 2.8 td(off) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristicsb Qg Total Gate Charge VGS

10 V, VDS

30 V, IDS 2 A 7.3 nC Qgs Gate-Source Charge 1.4 Qgd Gate-Drain Charge 1.1 Notes烉 a : Pulse test ; pulse width /g100 300 /g80s, duty cycle /g100 b : Guaranteed by design, not subject to production testing Electrical Characteristics (TA=25 unless otherwise noted)

Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Operating Transient Thermal Impedance ID - Drain Current (A) Normalized Transient Thermal Resistance VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.3 0.6 0.9 1.2 1.5 TA= 25 o C 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R/g84JA : 90 o C / W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA= 25 o C, VG= 10 V 0.01 0.1 1 10 100 400 0.01 0.1 1ms 300us Rds(on) Limit TA= 25 o C 10ms 100ms DC 100us RATING AND CHARACTERISTICS CURVES (RM3N60EA)

Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS = 250 /g80A 02468 1 0 100 110 VGS= 4.5 V VGS= 10 V 123456789 1 0 100 110 120 130 140 150 ID= 2 A RATING AND CHARACTERISTICS CURVES (RM3N60EA)

Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 1 02 03 04 05 0 100 200 300 400 500 Frequency = 1 MHz Crss Coss Ciss 02468 VDS= 30 V IDS= 2 A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj= 25 o C: 74.4 m/g58 VGS= 10 V ID = 2 A 0.1 Tj= 150 o C Tj =25 o C RATING AND CHARACTERISTICS CURVES (RM3N60EA)

MIN. MAX. A 1.00 1.45 0.00 0.15 1.00 1.30 D 2.70 3.10 E 2.60 3.00 1.50 1.70 c 0.08 0.25 b 0.30 0.50 e

0.95 BSC

1.90 BSC

L 0.30 0.60

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