RM3B

RM3 SANKEN | Alldatasheet

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Forward Voltage VF (V) Forward Current IF (A) Forward Voltage VF (V) Forward Current IF (A) Forward Voltage VF (V) Forward Current IF (A) VF--- IF Characteristics (Typical) VF--- IF Characteristics (Typical) VF--- IF Characteristics (Typical) 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 Ambient Temperature Ta (ºC) 0 25 50 75 100 125 150 3.00 3.75 2.25 1.50 0.75 20•20•1t Cu Heatsink on both sides Without Heatsink 0 25 50 75 100 125 150 0.7 1.4 2.1 2.8 3.5 20•20•1t Cu Heatsink on both sides Without Heatsink Ta 100ºC= 25ºC 0.1 100 0 1.0 2.0 Ta=100º C Ta=25ºC 50.0 –0.1 1.4–0.1 6.5–0.2 8.0–0.2 62.5–0.7 1.2–0.05 5.2–0.2 9.1–0.2 0 1 IFMS Rating IFMS Rating IFMS Rating Peak Forward Surge Current IFSM (A)Peak Forward Surge Current IFSM (A)Peak Forward Surge Current IFSM (A) 50 10 20ms IFSM (A) 150 100 1 5 120 50 10 160 200 RM4B RM4C RM 4Y RM 4Z RM 4 RM 4A 0 1 5 50 10 20ms IFSM (A) 350 100 200 300 RM3C RM 3 series RM 4 series RM 4M series 0.1 0.01 0.001 100 0.1 0.01 0.001 T a 150ºC= 25ºC 100ºC L=20mm L=20mm P. C. B. 1.6 t Solder Land 5.5 5mm 5mm 5mm 5mm Rectifier Diodes Parameter Type No. Absolute Maximum Ratings VRM (V) IFSM (A) VF (V) IF (A) VR = VRM max VR = VRM Ta = 100°C max IR (µA) IR (H) (µA) Tj (°C) Tstg (°C) max Electrical Characteristics (Ta = 25°C) (g) Mass Others RM 3 400 RM 3A 600 RM 3B 800 RM 3C 1000 RM 4Y 100 RM 4Z 200 RM 4 400 RM 4A 600 RM 4B 800 RM 4C 1000 RM 4AM 600 2.5 2.0 1.7 (3.0) 1.8 (3.2) (150°C)2.5 10 10 1.0150 200 150 350 1000.95 –40 to +150 A 3.0 10 8 1.2 50 3.5 10 8 1.2 50 B 0.95 0.97 0.92 Average Forward Current IF (AV) (A) Ta—I F (AV) Derating Ambient Temperature Ta (ºC) Average Forward Current IF (AV) (A) Ta—I F (AV) Derating Ta—I F (AV) Derating Ambient Temperature Ta (ºC) Average Forward Current IF (AV) (A) IF (AV) (A) 50Hz Half-cycle Sinewave Single Shot Fig. ( ) is with Heatsink Overcurrent Cycles Overcurrent Cycles Overcurrent Cycles External Dimensions (Unit: mm) Flammability: UL94V-0 or Equivalent AFig. BFig. Cathode Mark Cathode Mark (°C/W) Rth (j- )