RM370N150T7 RECTRON | Alldatasheet
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/g122 /g122 /g122 /g122 /g122 Application /g122 /g122 /g122 TO-247 G G D D D S High Speed Power Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial N-Channel Power MOSFET VDS 150 V, mW AID RDS(on) /g122 = 366 Part Number Package TO-247 370N150 Marking RM370N150T7 Pulsed Drain Current IDM VDSDrain to Source Voltage Gate to Source Voltage VGS - ID A Thermal Resistance Junction-Case 60Thermal Resistance Junction-Ambient Parameter Max Operating and Storage Temperature TJ, Tstg - Absolute Maximum Ratings 833 RqJA RqJC ℃/W 0.18 ℃/W Symbol PD TC=25℃Power Dissipation Unit W -55 to 175 TC=25℃ 180 TC=100℃ 258 Unit TC=25℃Continuous Drain Current (Silicon Limited) 366 V V 150 1200 ±20 L=0.4mH, TC=25℃ 720 A mJAvalanche Energy, Single Pulse EAS ValueParameter Symbol Absolute Maximum Ratings at T j =25℃ (unless otherwise specified) Conditions Continuous Drain Current (Package Limited) VGS 10 V =< 2.8 RM370N150T7 2023-04/69 REV:O
Electrical Characteristics at T j=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Transconductance Conditions Value Unittyp 150 V4.0 min max Gate Threshold Voltage 2.8 mWDrain to Source on Resistance VGS(th) VGS=VDS, ID=250mA 2.0 2.9 Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250mA VGS=10V, ID=20A - 2.35RDS(on) mA VGS=0V, VDS=150V, Tj=100℃ - - 100 - 1 Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=150V, Tj=25℃ - ±100 nA Dynamic Characteristics Input Capacitance Ciss VGS=0V, VDS=75V, f=1MHz - 0.7 S pF- Gate Resistance RG VGS=0V, VDS Open, f=1MHz - W -80 Crss VDS=5V, ID=20Agfs Reverse Transfer Capacitance Total Gate Charge Qg(10V) Gate to Source Charge Qgs 1431 VDD=75V, ID=20A, VGS=10V Gate to Drain (Miller) Charge Qgd Output Capacitance - 16 Coss - 11436- nC- 44 - - 20 138 - nsReverse Recovery Time Reverse Recovery Charge Qrr - trr VR=75V, IF=20A, dIF/dt=100A/ms 587 - nC 150 - Diode Forward Voltage VSD VGS=0V, IF=20A - 0.9 1.2 V ns- Rise time tr Turn off Delay Time td(off) 19 - Turn on Delay Time td(on) VDD=75V, ID=20A, VGS=10V, RG=10W, Fall Time tf - -52 Reverse Diode Characteristics
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 REF 0.138 REF E2 3.600 REF 0.142 REF L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 7.100 7.300 0.280 0.287 e 5.450 TYP 0.215 TYP H 5.980 REF 0.235 REF
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