RM30N100HD RECTRON | Alldatasheet

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N-Channel Enhancement Mode Power MOSFET

Description

The RM30N100HD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS = 100V,I D =30A ƽ Special process technology for high ESD capability ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high E AS ƽ Excellent package for good heat dissipation Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply 100% UIS TESTED! 100% /g507Vds TESTED! Absolute Maximum Ratings (T C =25ććunless otherwise noted) Symbol Parameter Limit Unit V DS Drain-Source Voltage 100 V V GS Gate-Source Voltage ±20 V I D Drain Current-Continuous 30 A I D (100ć) Drain Current-Continuous(TC=100ć) 21 A I DM Pulsed Drain Current 70 A P D Maximum Power Dissipation 75 W Derating factor

0.5 W/ ć

E AS Single pulse avalanche energy (Note 5) 256 mJ T J STG Operating Junction and Storage Temperature Range -55 To 175 ć Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity - - 30N100 RM30N100H D TO-263 2020-07/15 REV:A Halogen-free RM30N100HD TO-263 top view R DS(ON) < 50mΩ @ V GS =10V (Typ:40mΩ) R DS(ON) < 60mΩ @ V GS =5V (Typ:50mΩ)

R /g537JC Thermal Resistance, Junction-to-Case (Note 2) 2.0 /Wć Electrical Characteristics (T C =25ćunless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V I D =250/g541A 100 110 - V I DSS Zero Gate Voltage Drain Current V DS =100V,V GS =0V - - 1 /g541A I GSS Gate-Body Leakage Current V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) V GS(th) Gate Threshold Voltage V DS GS D =250/g541A 2 3 4 V g FS Forward Transconductance V DS =5V,I D =10A - 15 - S Dynamic Characteristics (Note4) C lss Input Capacitance - 2000 - PF C oss Output Capacitance - 300 - PF C rss Reverse Transfer Capacitance V DS =25V,V GS =0V, F=1.0MHz - 250 - PF Switching Characteristics (Note 4) t d(on) Turn-on Delay Time - 7 - nS t r Turn-on Rise Time - 7 - nS t d(off) Turn-Off Delay Time - 29 - nS t f Turn-Off Fall Time V DD =50V,R L =5/g525 V GS =10V,R GEN =3/g525 - 7 - nS Q g Total Gate Charge - 39 - nC Q gs Gate-Source Charge - 8 - nC Q gd Gate-Drain Charge V DS =50V,I D =18A, V GS =10V - 12 - nC Drain-Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V,I S =20A - - 1.2 V I S Diode Forward Current (Note 2) - - - 30 A t rr Reverse Recovery Time - 32 - nS Qrr Reverse Recovery Charge TJ = 25°C, IF = 18A di/dt = 100A//g541s (Note3) - 53 - nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 5. EAS Condition : Tj=25 ,Vć DD =50V,V G =10V,L=0.5mH,Rg=25/g525, I AS =32A R DS(ON) Drain-Source On-State Resistance GS =5V, I D =8A V GS =10V, I D =12A - V 40 50 50 60- mΩ mΩ

) E S Test Circuit 2) ate Charge Test Circuit 3) Switch Time Test Circuit

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