RM3075S8

RM3075S8 RECTRON | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM3075S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for high and low side switches for inverter ; high and low side switches for generic Half-Bridge, low voltage applications such as DC/DC converters. General Features N-Channel V DS = 30V,I D =6.8A R DS(ON) < 40m @ V GS =4.5V R DS(ON) < 27m @ V GS =10V P-Channel V DS = -30V,I D = -4.6A R DS(ON) < 103m @ V GS =-4.5V R DS(ON) < 64m @ V GS =-10V High power and current handing capability Lead f ree product is acquired Surface mount package Application DC/DC converters Power management Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25 6.8 -4.6 Continuous Drain Current T A =70 I D 5.4 -3.7 A Pulsed Drain Current (Note 1) I DM 34 -23 A Maximum Power Dissipation T A =25 P D 2.0 2.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 1 50 N-channel P-channel RM3075S8 2018-11/15 REV:A

3075 RM3075S8 SOP-8 8830mm 12mm 2500 units

N-Ch 62.5 Thermal Resistance,Junction-to-Ambient (Note2) R JA P-Ch 62.5 A =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250 A 30 Zero Gate Voltage Drain Current I DSS V DS =24V,V GS =0V - - 1 A Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =10 A 1.3 V GS =10V, I D Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5.4 Forward Transconductance g FS V DS =15V,I D =5.4 Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 36 Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f V DD =15V,I D =1A V GS =4.5V,R GEN =6.2 - 3.9 - Total Gate Charge Q g Gate-Source Charge Q gs 1.4 Gate-Drain Charge Q gd V DS =15V,I D =6.8A, V GS =10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =2.0A m m 1.8 2.3 V - - V =6.8A 22 27 - 3 3 4 0A 8.2A - - S -398 PF - PF 82 - P F - nS 5.1 nS - 4.8 - 4.9 nS nS 14 nC 6.8 nC - nC 0.98 V - - 1.2

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250 A -30 Zero Gate Voltage Drain Current I DSS V DS=-24V,VGS=0V - - -1 A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-10 A VGS=-10V, ID=-4.6A Drain-Source On-State Resistance R DS(ON) VGS=-4.5V, ID=-3.7A Forward Transconductance g FS V DS=-15V,ID=-3.7A Dynamic Characteristics (Note4) Input Capacitance C lss - Output Capacitance C oss - Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) nC Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=-15V, ID=-1A, VGS=-4.5V,R GEN=6.8 Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=-15V,ID=-4.6A VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS -1.2 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2. % 4. Guaranteed by design, not subject to production m m - V - -1.3 -1.8 -2.3 V - 51 64 - 82 103 4.1 - - S - 383 - 104 - 16 8.1 nS - - 14 nS - - 17 nS - - 15 nS - - 8 nC - - 1.3 nC - - 2.1 =-2A - - V

RATING AND CHARACTERISTICS CURVES (RM3075S8) Fig 3. Typical Transfer Characteristics Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 ID,Drain-to-Source Current(A) VGS TOP 7.5V 6.5V 5.5V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.75V /g10060/g122s PULSE WIDTH Tj = 25°C 2.75V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 ID,Drain-to-Source Current(A) 2.75V /g10060/g122s PULSE WIDTH Tj = 150°C VGS TOP 7.5V 6.5V 5.5V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.75V 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) 0.1 100 ID,Drain-to-Source Current(A) TJ = 25°C TJ = 150°C VDS = 15V /g10060/g122s PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 RDS(on),Drain-to-Source On Resistance (Norm alized) ID = 5.4A VGS = 4.5V

RATING AND CHARACTERISTICS CURVES (RM3075S8) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 C,Capacitance (pF) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0123456789 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VGS,Gate-to-Source Voltage (V) VDS= 24V VDS= 15V VDS= 6.0V ID= 6.8A Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain Diode Forward Voltage VSD, Source-to-Drain Voltage (V) 0.1 100 ISD,Reverse Drain Current(A) TJ = 25°C TJ = 150°C VGS = 0V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 ID, Drain-to-Source Current(A) Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100/g122sec DC

RATING AND CHARACTERISTICS CURVES (RM3075S8) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32/g100/g3/g20/g3/G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/g100/g3/g19/g17/g20/g3/g8 /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G71/G83 - /G86/G68/G68 25 50 75 100 125 150 TA , Ambient Temperature (°C) ID, Drain Current(A) Fig 12. Typical On-Resistance vs. Drain Current Fig 11. Typical On-Resistance vs. Gate Voltage 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 100 RDS(on), Drain-to -Source On Resistance /g58) ID = 6.8A 0 5 10 15 20 25 30 35 40 45 ID, Drain Current (A) 100 110 120 RDS(on), Drain-to -Source On Resistance (m/g58) Vgs = 4.5V Vgs = 10V

Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32/g100/g3/g20/g3/G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/g100/g3/g19/g17/g20/g3/g8 /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G71/G83 - /G86/G68/G68 Fig 12. Typical On-Resistance vs. Drain Current Fig 11. Typical On-Resistance vs. Gate Voltage 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 100 RDS(on), Drain-to -Source On Resistance (m /g58) ID = 6.8A 0 5 10 15 20 25 30 35 40 45 ID, Drain Current (A) 100 110 120 RDS(on), Drain-to -Source On Resistance (m/g58) Vgs = 4.5V Vgs = 10V 25 50 75 100 125 150 TA , Ambient Temperature (°C) ID, Drain Current (A) RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 13. Threshold Voltage vs. Temperature /G70/G105/G103/G32/G49/G52/G46/G32/G32/G32Typical Power vs. Time Fig 15b. Gate Charge Test CircuitFig 15a. Basic Gate Charge Waveform QG QGS QGD VG Charge /G86/G71/G83 D.U.T. VDS IDIG 3mA VGS .3/g80F 50K/g58 .2/g80F12V Current Regulator Same Type as D.U.T. Current Sampling Resistors -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS(th), Gate threshold Voltage (V) ID = 10/g122A 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Time (sec) 4000 8000 12000 16000 20000 Power (W RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 16. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 100 Therm al Response ( Z thJA ) °C/W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 19. Typical Transfer Characteristics Fig 18. Typical Output CharacteristicsFig 17. Typical Output Characteristics Fig 20. Normalized On-Resistance vs. Temperature 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 0.1 100 -ID, Drain-to-Source Current (A) VGS TOP -8.0V -7.0V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.75V /g10060/g122s PULSE WIDTH Tj = 25°C -2.75V 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 0.1 100 -ID, Drain-to-Source Current (A) -2.75V /g10060/g122s PULSE WIDTH Tj = 150°C VGS TOP -8.0V -7.0V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.75V 1 2 3 4 5 6 7 -VGS, Gate-to-Source Voltage (V) 0.1 100 -ID, Drain-to-Source Current (A) TJ = 25°C TJ = 150°C VDS = -15V /g10060/g122s PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = -3.7A VGS = -4.5V RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 22. Typical Gate Charge vs. Gate-to-Source Voltage Fig 21. Typical Capacitance vs. Drain-to-Source Voltage Fig 24. Maximum Safe Operating AreaFig 23. Typical Source-Drain Diode Forward Voltage 1 10 100 -VDS, Drain-to-Source Voltage (V) 100 1000 10000 C, Capacitance (pF) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 02468 1 0 1 2 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -VGS, Gate-to-Source Voltage (V) VDS= -24V VDS= -15V VDS= -6.0V ID= -4.6A -VSD, Source-to-Drain Voltage (V) 0.10 1.00 10.00 100.00 -ISD, Reverse Drain Current (A) TJ = 25°C TJ = 150°C VGS = 0V 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 -ID, Drain-to-Source Current (A) Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100/g122sec DC RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 25. Maximum Drain Current vs. Ambient Temperature /G86/G68/G83 /G86/G71/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32/g100/g3/g20/g3/G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/g100/g3/g19/g17/g20/g3/g8 /G82/G68 /G86/G71/G83 /G86/G68/G68 /G82/G71 /G68/G46/G85/G46/G84/G46 VDS 90% 10% VGS td(on) tr td(off) tf Fig 26a. Switching Time Test Circuit Fig 26b. Switching Time Waveforms Fig 28. Typical On-Resistance vs. Drain CurrentFig 27. Typical On-Resistance vs. Gate Voltage 25 50 75 100 125 150 TA , Ambient Temperature (°C) 0.0 1.0 2.0 3.0 4.0 5.0 -ID, Drain Current (A) 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) 120 160 200 RDS(on), Drain-to -Source On Resistance (m /g58) ID = -4.6A 0 5 10 15 20 25 30 -ID, Drain Current (A) 100 200 300 400 500 600 RDS(on), Drain-to -Source On Resistance (m/g58) Vgs = -4.5V Vgs = -10V RATING AND CHARACTERISTICS CURVES (RM3075S8)

Fig 31b. Gate Charge Test CircuitFig 31a. Basic Gate Charge Waveform QG QGS QGD VG Charge D.U.T. VDS IDIG -3mA VGS .3/g80F 50K/g58 .2/g80F12V Current Regulator Same Type as D.U.T. Current Sampling Resistors Fig 29. Threshold Voltage vs. Temperature Fig 30/G46/G32/G32/G32Typical Power vs. Time 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Time (sec) 4000 8000 12000 16000 20000 Power (W -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -VGS(th), Gate threshold Voltage (V) ID = -10/g122A RATING AND CHARACTERISTICS CURVES (RM3075S8)

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 /g537 0r 8 r 0 r 8 r

Part No. Week – code (WW:01~52) Y Y W W Year – Code (Y:18-----2018

(pcs/tube) Tube (pcs/inner box) Tube (pcs/cartoon) Tape&Reel (pcs/reel) Tape&Reel (pcs/inner box) Tape&Reel (pcs/cartoon) DFN 100 10,000 100,000 2,500 5,000 40,000 SOP-8 100 10,000 100,000 4,000 4,000 20,000 TSSOP-8 100 32,000 128,000 3,000 6,000 48,000 TO-252-2L(4R) 80 4,000 40, 000 2,500 2,500 25,000 TO-263-2L 50 1,000 10,000 800 800 8,000

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