RM300N80T7 RECTRON | Alldatasheet

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Technical content

Features

Advanced trench cell design MSL1 Tj max 175Ȼ

Applications

RDS(ON) ʆ 2.8 mΩ @ VGS = 10 V Halogen-free Simplified Outline 2,3 5,6,7 Top View TO-263-7L Symbol Source 1.Gate 4.Drain D S G Product Name Marking RM300N80T7 Package Quantity 300N80 TO-263-7L 800 Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TC = 25 ഒ 80 - V VGS Gate-Source Voltage TC = 25 ഒ -± 2 0 V ID*,*** Drain Current ( DC ) TC = 25 ഒ, VGS = 10 V - 300 A IDM*,,* Drain Current ( Pulsed ) TC = 25 ഒ, VGS = 10 V - 800 A Ptot* Drain power dissipation TC = 25 ഒ - 500 W Tstg Storage Temperature -55 175 ഒ TJ Junction Temperature - 175 ഒ IS Continuous-Source Current TC = 25 ഒ - 300 A EAS* Single Pulsed Avalanche Energy VDD= 50V, L= 0.5 mH, RG=1˖ - 2000 mJ RθJA* Thermal Resistance- Junction to Ambient - 32.1 ഒ/W RθJC* Thermal Resistance- Junction to Case - 0.45 ഒ/W Notes: * Surface Mounted on 1 in2 pad area, t /g10010 sec Pulse width /g100300 /g80s, duty cycle /g1002 % * Limited by bonding wire Limiting Values 2022-09/113 REV:O

Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, IDS = 250 μA 80 - - V VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 2 - 4 V IDSS Drain Leakage Current VDS = 64 V, VGS = 0 V - - 1 μA TJ = 85 ć - - 30 μA IGSS Gate Leakage Current VGS = 0 V, VGS = ± 20 V - - ±100 nA RDS(ON)a On-State Resistance VGS = 10 V, IDS = 50 A - 2.4 2.8 m¡ Diode Characteristics VSDa Diode Forward Voltage ISD = 30 A, VGS = 0 V - - 1.2 V trr Reverse Recovery Time IDS = 30 A, VGS = 0 V dlSD/dt = 100 A/μs - 65 - nS Qrr Reverse Recovery Charge - 83 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS = 0 V, VDS = 25 V Frequency = 1 MHz - 13200 - pF Coss Output Capacitance - 950 - Crss Reverse Transfer Capacitance - 810 - td(on) Turn-on Delay Time VDS = 40 V, VGEN = 10 V, RG = 4.5 Ω, RL = 1.3 Ω, IDS = 40 A - 26 - nS tr Turn-on Rise Time - 20 - td(off) Turn-off Delay Time - 50 - tf Turn-off Fall Time - 18 - Gate Charge Characteristicsb Qg Total Gate Charge VDS = 64V, VGS = 10 V, IDS = 80 A - 257 - nC Qgs Gate-Source Charge - 76 - Qgd Gate-Drain Charge - 80 - Notes烉 a : Pulse test ; pulse width /g100 300 /g80s, duty cycle /g100 2% b : Guaranteed by design, not subject to production testing

Electrical Characteristics

( TA=25ഒ Unless Otherwise Noted )

Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Safe Operating Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 180 100 200 300 400 500 600 TC=25 o C 0 20 40 60 80 100 120 140 160 100 150 200 250 300 350 TC=25 o C,VG=10V 0.01 0.1 1 10 100 500 0.1 100 1000 2000 100us 300us 1msRds (on) Limit TC=25 o C 10ms DC 1E-4 1E-3 0.01 0.1 1 0.01 0.1 0.02 Mounted on 1in pad R/g84JC : 0.45 o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 RATING AND CHARACTERISTICS CURVES (RM300N80T7)

Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250/g80A 123456789 1 0 IDS=30A VGS=5,6,7,8,9,10V 01 0 2 0 30 40 50 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS =10V RATING AND CHARACTERISTICS CURVES (RM300N80T7)

Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 20 40 60 80 100 120 VDS= 40V ID = 30A -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 2.7m/g58 VGS = 10V IDS = 30A Tj=25 o C Tj=150 o C 0 5 10 15 20 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 Frequency=1MHz Crss Coss Ciss RATING AND CHARACTERISTICS CURVES (RM300N80T7)

MIN. MAX. A 4.30 4.70 0.25 2.20 2.60 b 0.65 0.85 0.65 0.80 0.80 1.00 0.80 0.95 c 0.45 0.60 0.45 0.55 1.25 1.40 D 9.00 9.40 6.86 7.42 E 9.68 10.08 7.70 8.30 e

1.27 BSC

7.62 BSC

L 1.78 2.79 1.60 1.78

0.25 BSD

H 14.61 15.88

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