RM3003S6 RECTRON | Alldatasheet
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Technical content
N and P-Channel Enhancement Mode Power MOSFET
Description
The RM3003S6 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-Channel V DS = 30V,ID = 3.5A RDS(ON) GS=10V RDS(ON) GS=4.5V P-Channel VDS = -30V,ID = -2.7A RDS(ON) GS=-10V RDS(ON) GS=-4.5V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Schematic diagram Marking and pin Assignment TSOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
3003 RM3003S6 TSOT23-6L
Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V TA=25 3.5 -2.7 Continuous Drain Current TA=70 ID 3 -2.1 A Pulsed Drain Current (Note 1) I DM 20 -15 A Maximum Power Dissipation TA=25 PD 1.2 W Operating Junction and Storage Temperature Range T J,TSTG -55 To 150 -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R N-Ch 104 /W Thermal Resistance,Junction-to-Ambient (Note2) R P-Ch 104 /W N-channel P-channel 2018-09/15 REV:O RM3003S6 Halogen-free 3003 Ø180mm 8mm 3000units
Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID Zero Gate Voltage Drain Current I DSS V DS=30V,VGS Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID VGS=10V, ID Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID Forward Transconductance g FS V DS=5V,ID=3.1A - 4 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 210 - PF Output Capacitance C oss - 35 - PF Reverse Transfer Capacitance C rss VDS=15V,VGS=0V, F=1.0MHz - 23 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 4.5 - nS Turn-on Rise Time t r - 1.5 - nS Turn-Off Delay Time t d(off) - 18.5 - nS Turn-Off Fall Time t f VDD=15V, RL VGS=10V,RGEN - 15.5 - nS Total Gate Charge Q g - 5 - nC Gate-Source Charge Q gs - 0.55 - nC Gate-Drain Charge Q gd VDS=15V,ID=3.5A, VGS=10V - 1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=3.5A - 0.8 1.2 V Diode Forward Current (Note 2) I S - - 3.5 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. Guaranteed by design, not subject to production 0.7 1.3
Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250/g541A -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS=-30V,VGS=0V - - -1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250/g541A -1 -1.6 -2.5 V VGS=-10V, ID=-2.7A - 69 100 m/g525 Drain-Source On-State Resistance R DS(ON) VGS=-4.5V, ID=-2A - 110 150 m/g525 Forward Transconductance g FS V DS=-10V,ID=-2.7A 2 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 199 - PF Output Capacitance C oss - 47 - PF Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz - 28 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - nS Turn-on Rise Time t r - 5 - nS Turn-Off Delay Time t d(off) - 12 - nS Turn-Off Fall Time t f VDD=-15V,RL=15/g525 VGS=-10V,RGEN=6/g525 - 4 - nS Total Gate Charge Q g - 5 - nC Gate-Source Charge Q gs - 0.7 - nC Gate-Drain Charge Q gd VDS=-15V,ID=-2.7A,VGS=-10V - 1.1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-2.7A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production
Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance
(pcs/tube) Tube (pcs/inner box) Tube (pcs/cartoon) Tape&Reel (pcs/reel) Tape&Reel (pcs/inner box) Tape&Reel (pcs/cartoon) DFN 100 10,000 100,000 2,500 5,000 40,000 SOP-8 100 10,000 100,000 4,000 4,000 20,000 TSSOP-8 100 32,000 128,000 3,000 6,000 48,000 TO-252-2L(4R) 80 4,000 40, 000 2,500 2,500 25,000 TO-263-2L 50 1,000 10,000 800 800 8,000
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